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1.
  • Benisty, H., et al. (author)
  • Low-loss photonic-crystal and monolithic InP integration : Bands, bends, lasers, filters
  • 2004
  • In: Photonic Crystal Materials and Devices II. - : SPIE - International Society for Optical Engineering. - 0819452688 ; , s. 119-128
  • Conference paper (peer-reviewed)abstract
    • Practical realizations of 2D (planar) photonics crystal (PhC) are either on a membrane or etched through a conventional heterostructure. While fascinating objects can emerge from the first approach, only the latter approach lends itself to a progressive integration of more compact PhC's towards monolithic PICs based on InP. We describe in this talk the various aspects from technology to functions and devices, as emerged from the European collaboration "PCIC". The main technology tour de force is deep-etching with aspect ratio of about 10 and vertical sidewall, achieved by three techniques (CAIBE, ICP-RIE, ECR-RIE). The basic functions explored are bends, splitters/combiners, mirrors, tapers, and the devices are filters and lasers. At the end of the talk, I will emphasize some positive aspects of "broad" multimode PhC waveguides, in view of compact add-drop filtering action, notably.
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2.
  • Benisty, H., et al. (author)
  • Models and measurements for the transmission of submicron-width waveguide bends defined in two-dimensional photonic crystals
  • 2002
  • In: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 38:7, s. 770-785
  • Journal article (peer-reviewed)abstract
    • One of the essential building-blocks of miniature photonic crystal (PC)-based photonic integrated circuits (PICs) is the sharp bend. Our group has focused on the 2-D photonic crystal based on a triangular lattice of holes perforating a standard heterostructure. The latter, GaAlAs-based or InP-based, is vertically a monomode waveguide. We consider essentially one or two 60 bends defined by one to five missing rows, spanning both cases of monomode and multimode channel waveguides. From intensive modeling and various experimental measurements (both on GaAs and InP), we point out the origin of the present level of bend insertion losses and discuss the merits of the many roads open for improved design.
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3.
  • Gerschutz, F., et al. (author)
  • Temperature insensitive 1.3 mu m InGaAs/GaAs quantum dot distributed feedback lasers for 10 Gbit/s transmission over 21 km
  • 2006
  • In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 42:25, s. 1457-1458
  • Journal article (peer-reviewed)abstract
    • Long wavelength monomode InGaAs/GaAs quantum dot (QD) distributed feedback (DFB) lasers with emission wavelength around 1325 ran are presented. Threshold currents below 19 mA for operating temperatures up to 70 degrees C and Output powers of 10 mW at 25 degrees C (6 mW at 70 degrees C) are observed. Error-free 10 Gbit/s transmission over 21 kin fibre with an extinction ratio of 8.5 dB at room temperature (5.1 dB at 70 degrees C) is demonstrated. The low threshold, low temperature sensitivity and high modulation speed were realised using complex coupled DFB lasers with ten stacks of self-organised MBE-grown QD layers and p-type modulation doping.
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4.
  • Happ, T. D., et al. (author)
  • Single-mode operation of coupled-cavity lasers based on two-dimensional photonic crystals
  • 2001
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:25, s. 4091-4093
  • Journal article (peer-reviewed)abstract
    • We report the fabrication of short-cavity lasers with highly reflective two-dimensional photonic crystal mirrors on an InGaAsP/InP laser structure emitting at 1.57 mum. An intracavity photonic crystal mirror creates two coupled cavities, which provide additional longitudinal mode selection for stable single-mode operation with side-mode suppression ratios exceeding 35 dB. The shortest lasers with l=100 mum overall length have a threshold current of 13 mA and provide more than 4 mW power under continuous wave operation. Longer devices with l=200 mum deliver up to 9 mW. A maximum modulation bandwidth of 7.9 GHz was determined by relative intensity noise measurements.
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5.
  • Anand, Srinivasan, et al. (author)
  • Towards realization of high quality 2D-photonic crystals in InP/GaInAsP/InP
  • 2004
  • In: 2004 International Conference on Indium Phosphide and Related Materials, Conference Proceedings. - 0780385950 ; , s. 311-313
  • Conference paper (peer-reviewed)abstract
    • Two-dimensional photonic crystals (PhCs) were etched into InP/GaInAsP/InP planar waveguides using chlorine based chemical assisted ion beam etching (CAIBE). Etching mechanisms and process parameters crucial for high quality PhC definition are discussed, with special attention to the lag-effect. The processed PhCs were optically characterized by measuring transmission through simple slabs and one-dimensional cavities. The optical properties inside the photonic bandgap are much better compared to both previously reported CAME results and results obtained with other etching methods. In particular, we measured a record quality factor of 310 for one-dimensional cavities fabricated in this material system.
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6.
  • Balocco, C, et al. (author)
  • Microwave detection at 110 GHz by nanowires with broken symmetry
  • 2005
  • In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 5:7, s. 1423-1427
  • Journal article (peer-reviewed)abstract
    • By using arrays of nanowires with intentionally broken symmetry, we were able to detect microwaves up to 110 GHz at room temperature. This is, to the best of our knowledge, the highest speed that has been demonstrated in different types of novel electronic nanostructures to date. Our experiments showed a rather stable detection sensitivity over a broad frequency range from 100 MHz to 110 GHz. The novel working principle enabled the nanowires to detect microwaves efficiently without a dc bias. In principle, the need for only one high-resolution lithography step and the planar architecture allow an arbitrary number of nanowires to be made by folding a linear array as many times as required over a large area, for example, a whole wafer. Our experiment on 18 parallel nanowires showed a sensitivity of approximately 75 mV dc output/mW of nominal input power of the 110 GHz signal, even though only about 0.4% of the rf power was effectively applied to the structure because of an impedance mismatch. Because this array of nanowires operates simultaneously, low detection noise was achieved, allowing us to detect -25 dBm 110 GHz microwaves at zero bias with a standard setup.
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7.
  • Ferrini, R., et al. (author)
  • Optical study of two-dimensional InP-based photonic crystals by internal light source technique
  • 2002
  • In: IEEE Journal of Quantum Electronics. - 0018-9197 .- 1558-1713. ; 38:7, s. 786-799
  • Journal article (peer-reviewed)abstract
    • We present the first optical study of 2-D photonic crystals (PCs) deeply etched in an InP/GaInAsP step-index waveguide. Following the same internal light source approach proposed by Labilloy and coworkers for the investigation of GaAs-based 2-D PCs, transmission measurements through simple PC slabs and 1-D Fabry-Perot (FP) cavities between PC mirrors were performed. Details are given on the experimental setup which has been implemented with respect to the original scheme and adapted to InP-based systems working at 1.5-mum. 2-D plane-wave expansion and finite difference time-domain (FDTD) methods are used to fit the experimental data. Out-of-plane losses were evaluated according to a recently introduced phenomenological model. In spite of the complex hole morphology in the measured samples, preliminary results are presented which indicate the possibility of separating different loss contributions from finite etch depth and hole shape. As for 1-D cavities, both FDTD and classical theory for planar resonators are applied in order to deduce the optical properties of the PC mirrors. The origin of an anomalously high transmission observed inside the stopgap is discussed and arguments are given to demonstrate the need for further modeling efforts when working in the bandgap regime.
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8.
  • Kamp, M., et al. (author)
  • Low loss InP based photonic crystal waveguides and resonators
  • 2005
  • In: Optoelectronic Integrated Circuits VII. - : SPIE - International Society for Optical Engineering. - 0819457035 ; , s. 249-256
  • Conference paper (peer-reviewed)abstract
    • We report on low-loss light propagation at the communication wavelength of 1.55 μm through straight two-dimensional photonic crystal waveguides patterned into InGaAsP/InP heterostructures. The linear defect waveguides along the ΓK direction of a triangular lattice of air holes were etched deeply into the semiconductor by Cl 2/Ar electron cyclotron resonance reactive ion etching. Efficient waveguiding was observed for both polarization directions, although a photonic band gap exists for only one of the polarization states. Propagation losses, determined by the Fabry-Pérot resonance method, are as low as 0.2 dB/mm and 1.5 dB/mm for waveguides based on seven and three missing rows of holes, respectively. Waveguide resonators with 100 GHz channel spacing and quality factors up to 15,000 have been realized by inserting photonic crystal mirrors into the waveguides. The dispersion of the resonators was measured using a phase shift technique. Values for the group velocity dispersion range from -250 ps/nm to +250 ps/nm at wavelengths around 1.55 μm, which is sufficient to compensate for the dispersion of 15 km standard single-mode fiber. Controlling the device temperature allows to tune the dispersive properties of the devices.
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9.
  • Kamp, M., et al. (author)
  • Photonic crystal based active optoelectronic devices
  • 2006
  • In: Photonic Crystals: Advances in Design, Fabrication, and Characterization. - Weinheim, FRG : Wiley-Blackwell. - 9783527602599 ; , s. 329-346
  • Book chapter (other academic/artistic)abstract
    • We have described a number of ways to integrate photonic crystals with active optoelectronic devices. PhCs can be used as mirrors in semiconductor lasers where their high reflectivity allow the fabrication of lasers with small cavity length. Lasers with a length down to 100 μm and two PhC mirrors have been demonstrated.
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10.
  • Kamp, M., et al. (author)
  • Photonic crystal waveguide based dispersion compensators
  • 2006
  • In: Proc SPIE Int Soc Opt Eng. - : SPIE. - 0819461652 - 9780819461650
  • Conference paper (peer-reviewed)abstract
    • We have investigated the dispersion properties of photonic crystal waveguide resonators. A passive InGaAsP/InP slab waveguide structure was used for the fabrication of the samples. The PhC waveguide resonators were defined by the omission of several rows of holes along the ΓK or ΓM direction of a triangular photonic crystal lattice. In addition, mirrors with a thickness of 1 to 4 rows of holes were inserted into the waveguide. An optimized dry etch process was used to etch the patterns to a depth of 3.5 μm through the waveguide layer. The group delay of the PhC devices was measured using the phase shift technique. The signal of a tunable laser was modulated at 3 GHz using a LiNbO 3 Mach-Zehnder modulator and detected with a high-frequency lightwave receiver. A phase sensitive detection with a network analyer measured the phase shift of the transmitted signal, which is proportional to the group delay. Close to the center of the resonances, the chromatic dispersion reaches values of -250 ps/nm and 250 ps/nm. This corresponds to the chromatic dispersion of 15 km standard fiber.
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11.
  • Kamp, M., et al. (author)
  • Semiconductor photonic crystals for optoelectronics
  • 2004
  • In: Physica. E, Low-Dimensional systems and nanostructures. - : Elsevier BV. - 1386-9477 .- 1873-1759. ; 21:2-4, s. 802-808
  • Journal article (peer-reviewed)abstract
    • We present a number of designs for the integration of photonic crystals (PC) with active semiconductor devices. As a first step, the use of PC blocks as laser mirrors is demonstrated. Ridge-waveguide lasers with a length of 100 mum and two PC mirrors achieve threshold currents below 8 mA. In order to obtain single-mode operation, an intracavity PC mirror can be used, which effectively separates the laser into two coupled cavities. Lasing occurs where two modes of the cavities coincide, leading to single-mode operation with a side-mode suppression ratio (SMSR) of over 35 dB. We also present two full PC devices: a single-mode laser with a coupled resonant cavity waveguide (CROW) and a tunable laser. The CROW device consists of a chain of 40 hexagonal cavities formed in a block of PC, with a total length of 140 mum. Low threshold, single-mode operation with over 40 dB SMSR is demonstrated. Coupled cavities are used for the tunable PC laser, which covers a tuning range of over 30 nm.
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12.
  • Kamp, M., et al. (author)
  • Technology and properties of photonic crystal based active and passive optoelectronic devices
  • 2004
  • Conference paper (peer-reviewed)abstract
    • We have investigated tunable photonic crystal waveguide lasers and their integration with a photonic crystal based combiner. The devices were fabricated on a layer structure with active and passive sections. The lasers are formed in the active part and consist of two longitudinally coupled photonic crystal waveguide segements. Photonic crystals based waveguides and a combiner, both defined in the passive sections, are used to direct the light of the two sources into a single output waveguide. Tuning over a 30 nm range is demonstrated. The two sources can be operated independently, allowing the simultaneous transmission of two freely selectable wavelengths.
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13.
  • Kamp, M., et al. (author)
  • Ultrashort InGaAsP/InP lasers with deeply etched Bragg mirrors
  • 2001
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 78:26, s. 4074-4075
  • Journal article (peer-reviewed)abstract
    • We have fabricated short cavity lasers with deeply etched Bragg mirrors based on 1.55 mum emitting InGaAsP/InP laser structures. Continuous-wave operation has been obtained for devices with a length of 40 mum, showing threshold currents of 12 mA. The dynamic properties of the lasers were studied by measurements of the relative intensity noise (RIN). A maximum modulation frequency of 8.4 GHz was extracted from the RIN data.
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14.
  • Misiewicz, J., et al. (author)
  • Photoreflectance investigations of the energy level structure in GaInNAs-based quantum wells
  • 2004
  • In: Journal of Physics. - : IOP Publishing. - 0953-8984 .- 1361-648X. ; 16:31, s. S3071-S3094
  • Journal article (peer-reviewed)abstract
    • In this paper, we present the application of photoreflectance (PR) spectroscopy to investigate the energy level structure of GaInNAs-based quantum wells (QWs). Series of single GaInNAs/GaAs QWs with different nitrogen and indium contents are analysed. The electron effective mass (m(e)(*)) and conduction e band offset (Q(C)) are determined and compared with the literature data. The Q(C) in GaInNAs/GaAs system in the range of investigated GaInNAs content (28-41% of In, 0.3-5.3% of N) has been found to be almost the same as for GaInAs/GaAs system, i.e. Q(C) approximate to 0.8. In addition, the energy level structure for the step-like GaInNAs/Ga(In)NAs/GaAs QWs tailored at 1.3 and 1.55 mum and the Sb-containing Ga(In)NAs/GaAs QWs is investigated. Also, the character of PR transitions, the influence of rapid thermal annealing (RTA) on the energy level structure, and the influence of the carrier localization effect on the efficiency of PR photomodulation are discussed.
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15.
  • Moosburger, J., et al. (author)
  • Nanofabrication of high quality photonic crystals for integrated optics circuits
  • 2002
  • In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 13:3, s. 341-345
  • Journal article (peer-reviewed)abstract
    • In this paper we report on the fabrication and characterization of two-dimensional photonic crystals. They are realized as a hexagonal array of air holes etched in GaAs or InP based slab waveguide heterostructures. The fabrication steps are discussed, with a focus on the development of suitable dry etching processes. Holes with a depth of I mum on GaAs and 4 Mm on InP were fabricated, which results in a good overlap of the guided mode with the photonic crystal patterns and low losses. The optical quality of the structures is assessed by transmission spectroscopy of photonic crystal blocks and photonic crystal-based waveguides.
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16.
  • Muench, S., et al. (author)
  • Time-resolved photoluminescence investigations on HfO2-capped InP nanowires
  • 2010
  • In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 21:10
  • Journal article (peer-reviewed)abstract
    • We have employed time-resolved photoluminescence (PL) spectroscopy to study the impact of HfO2 surface capping by atomic layer deposition (ALD) on the optical properties of InP nanowires (NWs). The deposition of high-kappa dielectrics acting as a gate oxide is of particular interest in view of possible applications of semiconductor NWs in future wrap-gated field effect transistors (FETs). A high number of charged states at the NW-dielectrics interface can strongly degrade the performance of the FET which explains the strong interest in high quality deposition of high-kappa dielectrics. In the present work we show that time-resolved spectroscopy is a valuable and direct tool to monitor the surface quality of HfO2-capped InP NWs. In particular, we have studied the impact of ALD process parameters as well as surface treatment prior to the oxide capping on the NW-dielectrics interface quality. The best results in terms of the surface recombination velocity (S-0 = 9.5 x 10(3) cm s(-1)) were obtained for InP/GaP core/shell NWs in combination with a low temperature (100 degrees C) ALD process. While the present report focuses on the InP material system, our method of addressing the surface treatment for semiconductors with high-kappa dielectrics will also be applicable to nanoelectronic devices based on other III/V material systems such as InAs.
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17.
  • Mulot, Mikael, et al. (author)
  • Fabrication of two-dimensional InP-based photonic crystals by chlorine based chemically assisted ion beam etching
  • 2004
  • In: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 22:2, s. 707-709
  • Journal article (peer-reviewed)abstract
    • Two-dimensional photonic crystals (PhCs) were etched into InP/(Ga,In)(As,P) planar waveguides using chlorine-based chemical assisted ion beam etching (CAIBE). The processed PhCs were optically characterized by measuring transmission through simple slabs and one-dimensional cavities. The optical performances inside the photonic band gap are much better compared to both previously reported CAIBE results and results obtained with other etching methods. In particular, we measured a record quality factor of 310 for one-dimensional cavities fabricated in this material system.
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18.
  • Qiu, Min, et al. (author)
  • Photonic crystal optical filter based on contra-directional waveguide coupling
  • 2003
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 83:25, s. 5121-5123
  • Journal article (peer-reviewed)abstract
    • Wavelength-selective operation of an optical filter (add/drop) based on a contra-directional photonic crystal waveguide coupler is demonstrated. The waveguides are defined as line defects in a two-dimensional triangular photonic crystal fabricated in an InP/GaInAsP heterostructure. The device is characterized using the end-fire method for the drop functionality. The experimental data are in good agreement with the theoretical results predicted by finite-difference time-domain simulations.
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19.
  • Schuller, C., et al. (author)
  • Polarization-dependent optical properties of planar photonic crystals infiltrated with liquid crystals
  • 2005
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 87:12
  • Journal article (peer-reviewed)abstract
    • Photonic crystals with infiltrated liquid crystals are investigated in the 1.5 mu m wavelength regime. Due to the strong temperature dependence of the refractive index of liquid crystals, especially near the clearing point, i.e., at the transition between nematic and isotropic phase, the optical properties of photonic crystals can be tuned by small temperature changes. The refractive index of liquid crystals is birefringent and, therefore, sensitive for the polarization of the incident light. By using microresonators embedded into planar photonic crystal waveguides, the polarization dependence of the optical properties with and without infiltrated liquid crystal is investigated. The experimental results quantitatively agree well with the calculated photonic band structure assuming a temperature depending reorientation of the liquid crystal director field inside the holes.
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20.
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21.
  • Sun, Y. T., et al. (author)
  • Selective growth of InP on focused-ion-beam-modified GaAs surface by hydride vapor phase epitaxy
  • 2001
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 79:12, s. 1885-1887
  • Journal article (peer-reviewed)abstract
    • The growth of InP islands on a planar focused-ion-beam (FIB)-modified (001) GaAs substrate was investigated in a hydride vapor phase epitaxy system. InP grew selectively on the FIB-implanted lines, forming continuous stripes, whereas isolated islands were observed outside the implanted area. The impact of the III/V ratio, crystallographic orientation of implanted lines, and implantation dose was explored. The choice of suitable growth conditions makes it possible to obtain continuous InP wires aligned in all possible directions. The results of this work could be used for the fabrication of future optoelectronic integrated circuits, which would include nanoscale structures, e.g., quantum-wire optical devices with GaAs electronic circuits.
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22.
  • Thelander, Claes, et al. (author)
  • Nanowire-based one-dimensional electronics
  • 2006
  • In: Materials Today. - 1369-7021. ; 9:10, s. 28-35
  • Journal article (peer-reviewed)abstract
    • During the last half century, a dramatic downscaling of electronics has taken place, a miniaturization that the industry expects to continue for at least a decade. We present efforts to use the self-assembly of one-dimensional semiconductor nanowires(1) in order to bring new, high-performance nanowire devices as an add-on to mainstream Si technology. The nanowire approach offers a coaxial gate-dielectric-channel geometry that is ideal for further downscaling and electrostatic control, as well as heterostructure-based devices on Si wafers.
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23.
  • Zimmermann, J., et al. (author)
  • Large dispersion in photonic crystal waveguide resonator
  • 2005
  • In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 41:7, s. 414-415
  • Journal article (peer-reviewed)abstract
    • Group delay and chromatic dispersion of a Fabry-Perot resonator embedded in a photonic crystal waveguide have been directly measured at 1.55 mu m avelength using the phase-shift technique. The photonic crystal waveguide resonator was fabricated in an InGaAsP/InP heterostructure and was designed to show a channel spacing of 100 GHz. Group velocity dispersion up to 250 ps/nm was observed.
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24.
  • Zimmermann, J, et al. (author)
  • Photonic crystal waveguides with propagation losses in the 1 dB/mm range
  • 2004
  • In: Journal of Vacuum Science & Technology B. - : American Vacuum Society. - 1071-1023 .- 1520-8567. ; 22:6, s. 3356-3358
  • Journal article (peer-reviewed)abstract
    • High-quality photonic crystal waveguides have been fabricated in the InGaAsP/InP and GaAs/AlGaAs material systems aimed at the communication wavelengths of 1.55 and 1.31 mum. The waveguides consist of omitted rows of holes in a triangular lattice of air holes etched into the semiconductor heterostructures by electron cyclotron resonance reactive ion etching. Efficient waveguiding has been observed in optical transmission measurements, with waveguide losses ranging from 1.5 dB/mm for a waveguide with three missing row of holes (W3) to 0.2 dB/mm for seven missing rows (W7). (C) 2004 American Vacuum Society.
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