| 1. |
- Adam, R. M., et al.
(author)
-
The XXL Survey: LI. Pressure profile and Y SZ -M scaling relation in three low-mass galaxy clusters at z∼1 observed with NIKA2
- 2024
-
In: Astronomy and Astrophysics. - 0004-6361 .- 1432-0746. ; 684
-
Journal article (peer-reviewed)abstract
- Context. The thermodynamical properties of the intracluster medium (ICM) are driven by scale-free gravitational collapse, but they also reflect the rich astrophysical processes at play in galaxy clusters. At low masses (∼1014M) and high redshift (z≳1), these properties remain poorly constrained, observationally speaking, due to the difficulty in obtaining resolved and sensitive data. Aims. We aim to investigate the inner structure of the ICM as seen through the Sunyaev-Zel’dovich (SZ) effect in this regime of mass and redshift. We focused on the thermal pressure profile and the scaling relation between SZ flux and mass, namely the YSZ-M scaling relation. Methods. The three galaxy clusters XLSSC 072 (z=1.002), XLSSC 100 (z=0.915), and XLSSC 102 (z=0.969), with M500∼2×1014M, were selected from the XXL X-ray survey and observed with the NIKA2 millimeter camera to image their SZ signal. XMM-Newton X-ray data were used as a complement to the NIKA2 data to derive masses based on the YX-M relation and the hydrostatic equilibrium. Results. The SZ images of the three clusters, along with the X-ray and optical data, indicate dynamical activity related to merging events. The pressure profile is consistent with that expected for morphologically disturbed systems, with a relatively flat core and a shallow outer slope. Despite significant disturbances in the ICM, the three high-redshift low-mass clusters follow the YSZ-M relation expected from standard evolution remarkably well. Conclusions. These results indicate that the dominant physics that drives cluster evolution is already in place by z∼1, at least for systems with masses above M500∼1014M.
|
|
| 2. |
- Paskova, Tanja, et al.
(author)
-
Polar and nonpolar HVPE GaN substrates: impact of doping on the structural, electrical and optical characteristics
- 2009
-
In: Physica Status Solidi. C, Current topics in solid state physics. - : Wiley. - 1610-1634 .- 1610-1642. ; 6:2, s. 344-347
-
Journal article (peer-reviewed)abstract
- Polar and nonpolar bulk GaN substrates with low defect density and high structural and optical quality are demonstrated. The effect of doping by silicon, oxygen and iron within moderate doping levels on the properties of the polar GaN substrates was found uncompromised, as confirmed by high resolution X-ray diffraction and low temperature photoluminescence spectroscopy. In contrast, the lattice parameters were affected significantly, which has to be considered in the subsequent homoepitaxial device growth. The boule growth and respectively the nonpolar substrate homogeneity were found to be hampered by the doping, due to surface microcracking and higher impurity incorporation, while n-type undoped nonpolar substrates were demonstrated of superior quality.
|
|
| 3. |
- Welsh, Joshua A., et al.
(author)
-
Minimal information for studies of extracellular vesicles (MISEV2023): From basic to advanced approaches
- 2024
-
In: Journal of Extracellular Vesicles. - : John Wiley and Sons Inc. - 2001-3078. ; 13:2
-
Journal article (peer-reviewed)abstract
- Extracellular vesicles (EVs), through their complex cargo, can reflect the state of their cell of origin and change the functions and phenotypes of other cells. These features indicate strong biomarker and therapeutic potential and have generated broad interest, as evidenced by the steady year-on-year increase in the numbers of scientific publications about EVs. Important advances have been made in EV metrology and in understanding and applying EV biology. However, hurdles remain to realising the potential of EVs in domains ranging from basic biology to clinical applications due to challenges in EV nomenclature, separation from non-vesicular extracellular particles, characterisation and functional studies. To address the challenges and opportunities in this rapidly evolving field, the International Society for Extracellular Vesicles (ISEV) updates its ‘Minimal Information for Studies of Extracellular Vesicles’, which was first published in 2014 and then in 2018 as MISEV2014 and MISEV2018, respectively. The goal of the current document, MISEV2023, is to provide researchers with an updated snapshot of available approaches and their advantages and limitations for production, separation and characterisation of EVs from multiple sources, including cell culture, body fluids and solid tissues. In addition to presenting the latest state of the art in basic principles of EV research, this document also covers advanced techniques and approaches that are currently expanding the boundaries of the field. MISEV2023 also includes new sections on EV release and uptake and a brief discussion of in vivo approaches to study EVs. Compiling feedback from ISEV expert task forces and more than 1000 researchers, this document conveys the current state of EV research to facilitate robust scientific discoveries and move the field forward even more rapidly.
|
|
| 4. |
|
|
| 5. |
- Paskova, Tanja, 1961-, et al.
(author)
-
Defect and emission distributions in bulk GaN grown in polar and nonpolar directions : a comparative analysis
- 2008
-
In: Proceedings of SPIE - The International Society for Optical Engineering. - : SPIE. ; , s. 68940D1-
-
Conference paper (peer-reviewed)abstract
- We have investigated bulk GaN material grown by HVPE either in the conventional polar [0001] direction and subsequently sliced with nonpolar surfaces or grown in the nonpolar [11-20] direction. Spatially resolved techniques such as cathodoluminescence imaging and transmission electron microscopy, as well as profile measuring techniques such as positron annihilation spectroscopy and secondary ion mass spectroscopy were employed to directly visualize the extended structural defects, and point defect (impurity and vacancy) distributions along the growth axes. A comparative analysis of the results shows a distinctive difference in the distribution of all kind of defects along the growth axes. A significant decrease in the defect density in material grown along the polar direction, in contrast to the constant behavior of the high defect density in material grown along the nonpolar direction points out the low-defect superior quality of the former material and indicates the preferable way of producing high-quality GaN substrates with nonpolar surfaces.
|
|
| 6. |
- Paskova, Tanya, et al.
(author)
-
GaN Substrates for III-Nitride Devices
- 2010
-
In: Proceedings of the IEEE. - : IEEE Institute of Electrical and Electronics. - 0018-9219 .- 1558-2256. ; 98:7, s. 1324-1338
-
Journal article (peer-reviewed)abstract
- Despite the rapid commercialization of III-nitride semiconductor devices for applications in visible and ultraviolet optoelectronics and in high-power and high-frequency electronics, their full potential is limited by two primary obstacles: i) a high defect density and biaxial strain due to the heteroepitaxial growth on foreign substrates, which result in lower performance and shortened device lifetime, and ii) a strong built-in electric field due to spontaneous and piezoelectric polarization in the wurtzite structures along the well-established [0001] growth direction for nitrides. Recent advances in the research, development, and commercial production of native GaN substrates with low defect density and high structural and optical quality have opened opportunities to overcome both of these obstacles and have led to significant progress in the development of several opto-electronic and high-power devices. In this paper, the recent achievements in bulk GaN growth development using different approaches are reviewed; comparison of the bulk materials grown in different directions is made; and the current achievements in device performance utilizing native GaN substrate material are summarized.
|
|
| 7. |
- Paskova, T., et al.
(author)
-
High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire
- 2006
-
In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 89:5, s. 051914-
-
Journal article (peer-reviewed)abstract
- Thick GaN bars with [1120] orientation have been sliced from GaN boules grown on freestanding films by hydride vapor phase epitaxy (HVPE) in the [0001] direction. High-resolution x-ray diffraction and transmission electron microscopy have been used to study the structural quality and defect distribution in the material in comparison to heteroepitaxially grown thick HVPE-GaN films grown in the [1120] direction on (1102)-plane sapphire. It is demonstrated that while the heteroepitaxial material possesses a high density of stacking faults and partial dislocations, leading to anisotropic structural characteristics, the (1120)-plane bulk GaN, sliced from boules, exhibits low dislocation density and narrow rocking curves with isotropic in-plane character. © 2006 American Institute of Physics.
|
|
| 8. |
|
|
| 9. |
- Paskova, T., et al.
(author)
-
Strain-free low-defect-density bulk GaN with nonpolar orientations
- 2006
-
In: MRS Proceedings. - : Springer Science and Business Media LLC. - 1946-4274.
-
Conference paper (peer-reviewed)abstract
- Bulk GaN sliced in bars along (11-20) and (1-100) planes from a boule grown in the [0001] direction by HVPE was confirmed as strain free material with a low dislocation density by using several characterization techniques. The high-structural quality of the material allows photoluminescence studies of free excitons, principal donor bound excitons and their twoelectron satellites with regard to the optical selection rules. Raman scattering study of the bulk GaN with nonpolar orientations allows a direct access to the active phonon modes and a direct determination of their strain-free positions.
|
|
