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1.	Ganji, N, et al. (author) Remote ischemic conditioning in necrotizing enterocolitis: study protocol of a multi-center phase II feasibility randomized controlled trial 2022 In: Pediatric surgery international. - 1437-9813. Journal article (peer-reviewed)
2.	Ganji, N, et al. (author) Remote ischemic conditioning in necrotizing enterocolitis: study protocol of a multi-center phase II feasibility randomized controlled trial 2022 In: Pediatric surgery international. - : Springer Science and Business Media LLC. - 1437-9813. ; 38:5, s. 679-694 Journal article (peer-reviewed)
3.	Wernersson, Lars-Erik, et al. (author) A combined chemical vapor deposition and rapid thermal diffusion process for SiGe Esaki diodes by ultra-shallow junction formation 2005 In: IEEE Transactions on Nanotechnology. - 1536-125X. ; 4:5, s. 594-598 Journal article (peer-reviewed)abstract SiGe Esaki diodes have been realized by rapid thermal diffusion of phosphorous into an SiGe layer grown by ultra-high-vacuum chemical-vapor-deposition on an Si p(+)-substrate for the first time. The phosphorous-doped SiGe forms the n(+)-electrode, while heavily boron-doped Si0.74Ge0.26 and Si substrate is used for the p(+) electrode. The diodes show a peak current density of 0.18 kA/cm(2), a current peak-to-valley ratio of 2.6 at room temperature, and they exhibit only a weak temperature dependence. Cross-sectional transmission microscopy showed a good crystalline quality of the strained Si0.74Ge0.26 layer even after the diffusion step at 900 degrees C.
4.	Wernersson, Lars-Erik, et al. (author) SiGe Esaki tunnel diodes fabricated by UHV-CVD growth and proximity rapid thermal diffusion 2004 In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 40:1, s. 83-85 Journal article (peer-reviewed)abstract A process for realisation of SiGe Esaki diodes in layers grown by ultra-high vacuum chemical vapour deposition has been developed and the first Esaki diodes are reported for this growth method. Intrinsic SiGe-layers are grown on highly boron-doped p(+)-Si layers, while post-growth proximity rapid thermal diffusion of phosphorous into the SiGe is employed to form an n(+)-layer. Tunnel diodes with a depletion layer width of about 6 nm have been realised in Si0.74Ge0.26, showing a peak current density of 0.18 kA/cm(2) and a current peak-to-valley ratio of 2.6 at room temperature.

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Type of publication: journal article (4)

Type of content: peer-reviewed (4)

Author/Editor: Li, B. (2); Zhang, J. (2); Wester, T. (2); Seifert, Werner (2); Wernersson, Lars-Eri ... (2); Shah, PS (2); show more...; Kim, JH (2); Ahmad, I (2); King, A (2); Lind, Erik (2); Palleri, E (2); Hall, N (2); Eaton, S (2); Walton, M. (2); Offringa, M (2); Seabaugh, A. (2); Pierro, A (2); Ng, E. (2); Deshpande, P. (2); Daneman, A (2); Wijnen, RMH (2); Ganji, N (2); Dhar, V (2); Faingold, R (2); Gauda, EB (2); Kabeer, MH (2); Livingston, MH (2); Wesson, DE (2); Willan, A (2); Yankanah, R (2); Zozaya, C (2); El Helou, S (2); Kabeer, S (2); Zela, Vilma (1); Helou, SE (1); Kosel, T H (1); Zela, V (1); Kosel, T (1); show less...

University: Lund University (2); Karolinska Institutet (2)

Language: English (4)

Research subject (UKÄ/SCB): Natural sciences (2); Engineering and Technology (2)

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