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1.	Wang, Xingjun, et al. (author) Dominant recombination centers in Ga(In)NAs alloys: Ga interstitials 2009 In: Applied Physics Letters. - : American Institute of Physics. - 0003-6951 .- 1077-3118. ; 95, s. 241904- Journal article (peer-reviewed)abstract Opticallydetected magnetic resonance measurements are carried out to study formationof Ga interstitial-related defects in Ga(In)NAs alloys. The defects, whichare among dominant nonradiative recombination centers that control carrier lifetimein Ga(In)NAs, are unambiguously proven to be common grown-in defectsin these alloys independent of the employed growth methods. Thedefects formation is suggested to become thermodynamically favorable because ofthe presence of nitrogen, possibly due to local strain compensation.
2.	Wang, Xingjun, et al. (author) Engineering spin-dependent carrier recombination processes in Ga(In)NAs for optoelectronic and photovoltaic applications 2011 In: Abstract Book of the Int. Conf. on Fundamental Optical Processes in Semiconductors, Lake Junaluska, USA. ; , s. PB3.- Conference paper (other academic/artistic)

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Author/Editor: Puttisong, Yuttapoom (2); Chen, Weimin (2); Tu, C. W. (2); Wang, Xingjun (2); Ptak, Aaron J. (2); Geelhaar, L. (2); show more...; Riechert, H. (2); Egorov, A. Yu. (2); Kalevich, V. K. (2); Buyanova, Irina (1); Buyanova, Irina A (1); show less...

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