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  • Zhou, Shuai, et al. (author)
  • The calculation of InGaN quantum dot formation mechanism on GaN pyramid
  • 2015
  • In: Superlattices and Microstructures. - : Elsevier. - 0749-6036 .- 1096-3677. ; 84, s. 72-79
  • Journal article (peer-reviewed)abstract
    • An equilibrium approach is used to calculate the free energy and composition distribution of InGaN/GaN quantum dot located on the InGaN/GaN pyramid. The energy balance method is adopted to predict critical conditions for quantum dot formation. We find that the formation of QD depends strongly on the size of pyramid top surface. The results can fit our experiment qualitatively.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Holtz, Per-Olof (1)
Zhao, Wei (1)
Yu, Zhongyuan (1)
Liu, Yumin (1)
Zhou, Shuai (1)
Wang, Donglin (1)
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Le, Lifeng (1)
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University
Linköping University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
2015 (1)

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