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Search: WFRF:(Lindelöw F.)

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1.
  • Lindelöw, F., et al. (author)
  • Gated Hall effect measurements on selectively grown InGaAs nanowires
  • 2017
  • In: Nanotechnology. - : IOP Publishing. - 0957-4484 .- 1361-6528. ; 28:20
  • Journal article (peer-reviewed)abstract
    • InGaAs nanowires is one of the promising material systems of replacing silicon in future CMOS transistors, due to its high electron mobility in combination with the excellent electrostatic control from the tri-gate geometry. In this article, we report on gated Hall measurements on single and multiple In0.85Ga0.15As nanowires, selectively grown in a Hall bridge geometry with nanowire widths down to 50 nm and thicknesses of 10 nm. The gated nanowires can be used as junctionless transistors, which allows for a simplified device processing as no regrowth of contact layer or ion implantation is needed, which is particularly beneficial as transistor dimensions are scaled down. The analysis shows that the InGaAs layer has a carrier concentration of above 1019 cm-3, with a Hall carrier mobility of around 1000 cm2 V-1 s-1. The gated Hall measurements reveal an increased carrier concentration as a function of applied gate voltage, with an increasing mobility for narrow nanowires but no significant effect on larger nanowires.
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2.
  • Zota, C. B., et al. (author)
  • High-frequency InGaAs tri-gate MOSFETs with fmax of 400 GHz
  • 2016
  • In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 0013-5194 .- 1350-911X. ; 52:22, s. 1869-1871
  • Journal article (peer-reviewed)abstract
    • Extremely scaled down tri-gate RF metal-oxide-semiconductor field-effect transistors (MOSFETs) utilising lateral nanowires as the channel, with gate length and nanowire width both of 20 nm are reported. These devices exhibit simultaneous extrapolated ft and fmax of 275 and 400 GHz at VDS = 0.5 V, which is the largest combined ft and fmax, as well as the largest fmax reported for all III-V MOSFETs.
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  • Result 1-2 of 2
Type of publication
journal article (2)
Type of content
peer-reviewed (2)
Author/Editor
Lind, E. (2)
Lindelöw, F. (2)
Zota, C. B. (2)
Wernersson, L. E. (1)
University
Lund University (2)
Language
English (2)
Research subject (UKÄ/SCB)
Engineering and Technology (2)

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