| 1. |
- Melios, C., et al.
(author)
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Tuning epitaxial graphene sensitivity to water by hydrogen intercalation
- 2017
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In: Nanoscale. - : Royal Society of Chemistry (RSC). - 2040-3372 .- 2040-3364. ; 9:10, s. 3440-3448
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Journal article (peer-reviewed)abstract
- The effects of humidity on the electronic properties of quasi-free standing one layer graphene (QFS 1LG) are investigated via simultaneous magneto-transport in the van der Pauw geometry and local work function measurements in a controlled environment. QFS 1LG on 4H-SiC(0001) is obtained by hydrogen intercalation of the interfacial layer. In this system, the carrier concentration experiences a two-fold increase in sensitivity to changes in relative humidity as compared to the as-grown epitaxial graphene. This enhanced sensitivity to water is attributed to the lowering of the hydrophobicity of QFS 1LG, which results from spontaneous polarization of 4H-SiC(0001) strongly influencing the graphene. Moreover, the superior carrier mobility of the QFS 1LG system is retained even at the highest humidity. The work function maps constructed from Kelvin probe force microscopy also revealed higher sensitivity to water for 1LG compared to 2LG in both QFS 1LG and as-grown systems. These results point to a new field of applications for QFS 1LG, i.e., as humidity sensors, and the corresponding need for metrology in calibration of graphene-based sensors and devices.
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| 2. |
- Melios, C., et al.
(author)
-
Detection of Ultralow Concentration NO2 in Complex Environment Using Epitaxial Graphene Sensors
- 2018
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In: ACS Sensors. - : American Chemical Society (ACS). - 2379-3694. ; 3:9, s. 1666-1674
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Journal article (peer-reviewed)abstract
- We demonstrate proof-of-concept graphene sensors for environmental monitoring of ultralow concentration NO2 in complex environments. Robust detection in a wide range of NO2 concentrations, 10-154 ppb, was achieved, highlighting the great potential for graphene-based NO2 sensors, with applications in environmental pollution monitoring, portable monitors, automotive and mobile sensors for a global real-time monitoring network. The measurements were performed in a complex environment, combining NO2/synthetic air/water vapor, traces of other contaminants, and variable temperature in an attempt to fully replicate the environmental conditions of a working sensor. It is shown that the performance of the graphene-based sensor can be affected by coadsorption of NO2 and water on the surface at low temperatures (≤70 °C). However, the sensitivity to NO2 increases significantly when the sensor operates at 150 °C and the cross-selectivity to water, sulfur dioxide, and carbon monoxide is minimized. Additionally, it is demonstrated that single-layer graphene exhibits two times higher carrier concentration response upon exposure to NO2 than bilayer graphene.
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| 3. |
- Winters, Michael, 1986, et al.
(author)
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Characterization and physical modeling of MOS capacitors in epitaxial graphene monolayers and bilayers on 6H-SiC
- 2016
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In: AIP Advances. - : AMER INST PHYSICS. - 2158-3226. ; 6:8
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Journal article (peer-reviewed)abstract
- Capacitance voltage (CV) measurements are performed on planar MOS capacitors with an Al2O3 dielectric fabricated in hydrogen intercalated monolayer and bilayer graphene grown on 6H-SiC as a function of frequency and temperature. Quantitative models of the CV data are presented in conjunction with the measurements in order to facilitate a physical understanding of graphene MOS systems. An interface state density of order 2 . 10(12)eV(-1)cm(-2) is found in both material systems. Surface potential fluctuations of order 80-90meV are also assessed in the context of measured data. In bilayer material, a narrow bandgap of 260meV is observed consequent to the spontaneous polarization in the substrate. Supporting measurements of material anisotropy and temperature dependent hysteresis are also presented in the context of the CV data and provide valuable insight into measured and modeled data. The methods outlined in this work should be applicable to most graphene MOS systems. (C) 2016 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
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