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- Mikelsen, M., et al.
(author)
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Carrier Removal in Electron Irradiated 4H and 6H SiC
- 2009
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In: Materials Science Forum, Vols. 600-603. - : Trans Tech Publications. ; , s. 425-428
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Conference paper (peer-reviewed)abstract
- A strong reduction of the free carrier concentration has been observed in both 4H and 6H n-type SiC as a result of MeV-electron irradiation. Samples irradiated with a sufficiently high dose experience complete compensation of carriers. Irradiation with even higher doses reveals the same result, i.e. no conversion to p-type which occurs in silicon irradiated with high doses has been found. The dose required for complete loss of carrier response is higher for 6H than 4H material. Furthermore, the free carrier concentration depends on both measurement temperature and frequency and recovers after annealing. The results strongly suggest that deep acceptor levels in the upper half of the band gap are the main cause for the removal of free carriers rather than deactivation of the nitrogen donors as found in ion-irradiated samples, which is in agreement with previous findings on proton-irradiated 4H- and 6H-SiC[8]. © (2009) Trans Tech Publications, Switzerland.
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| 2. |
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| 3. |
- Svensson, B. G., et al.
(author)
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Defects and diffusion in high purity silicon for detector applications
- 2004
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In: Conference on Photo-Responsive Materials, Proceedings. - : Wiley-VCH Verlagsgesellschaft. - 3527405526 ; , s. 2250-2257
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Conference paper (peer-reviewed)abstract
- In this contribution we review some recent results on defects occurring after irradiation and thermal treatment of silicon detectors for ionizing radiation. In particular, the annealing of the prominent divacancy centre and the concurrent growth of a new double acceptor centre, assigned to the divacancy-oxygen pair, is treated in detail. The detectors were fabricated using oxygenated high purity float zone (FZ) silicon wafers of n-type in order to improve the radiation hardness. The results obtained have important implication on our current understanding of the degradation of silicon detectors at high radiation fluences and suggest that a new concept for optimised impurity/defect engineering needs to be developed.
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