| 1. |
- Evropeytsev, E. A., et al.
(author)
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Coexistence of type-I and type-II band line-ups in 1-2 monolayer thick GaN/AlN single quantum wells
- 2017
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In: 4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017). - : IOP PUBLISHING LTD.
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Conference paper (peer-reviewed)abstract
- GaN/AlN quantum wells (QWs) with varied nominal thickness of 0.5-4 monolayers have been studied by time-resolved photoluminescence (PL) spectroscopy. The structures demonstrate an emission peak with the thickness-dependent wavelength in the range 225-320 nm. The observed temporal behavior of PL between 225 and 280 nm can be described as a superposition of fast and slow decaying components with characteristic decay time constants of the order of 0.1-0.7 ns and 7-30 ns, respectively. The fast PL component with the decay time smaller than 1 ns dominates in the thicker GaN insertions and tends to vanish in the thinnest ones, where the slow PL component becomes progressively longer. These observations imply formation in the GaN/AlN monolayer-thick layers of an inhomogeneous excitonic system involving both direct and indirect in space excitons.
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| 2. |
- Jmerik, V. N., et al.
(author)
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Site-Controlled Growth of GaN Nanorods with Inserted InGaN Quantum Wells on mu-Cone Patterned Sapphire Substrates by Plasma-Assisted MBE
- 2018
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In: Semiconductors (Woodbury, N.Y.). - : MAIK NAUKA/INTERPERIODICA/SPRINGER. - 1063-7826 .- 1090-6479. ; 52:5, s. 667-670
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Journal article (peer-reviewed)abstract
- We report on a new approach to fabricate regular arrays of GaN nanorods (NRs) with InGaN QWs by plasma-assisted molecular-beam epitaxy (PA MBE) on micro-cone patterned sapphire substrates (mu-CPSSs). A two-stage PA MBE fabrication process of GaN NRs has been developed, starting with a high temperature nucleation layer growth at metal-rich conditions to aggregate selectively GaN nucleus on c-oriented areas of the mu-CPSSs and followed by growth of 1-mu m-thick GaN NRs at strongly nitrogen-rich conditions exactly on the cone tips. These results are explained by energetically favorable GaN growth on the (000 (1) over bar) oriented sapphire surface. Both micro-photoluminescence and micro-cathodoluminescence confirm the formation of regular array of optically and spectrally isolated NRs without usage of any nanolithography.
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| 3. |
- Nechaev, D. V., et al.
(author)
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Site-controlled GaN nanocolumns with InGaN insertions grown by MBE
- 2017
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In: 4TH INTERNATIONAL SCHOOL AND CONFERENCE ON OPTOELECTRONICS, PHOTONICS, ENGINEERING AND NANOSTRUCTURES (SAINT PETERSBURG OPEN 2017). - : IOP PUBLISHING LTD.
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Conference paper (peer-reviewed)abstract
- The site-controlled plasma-assisted molecular beam epitaxy (PA MBE) has been developed to fabricate the regular array of GaN nanocolumns (NCs) with InGaN insertions on micro-cone patterned sapphire substrates (mu-CPSSs). Two-stage growth of GaN NCs, including a nucleation layer grown at metal-rich conditions and high temperature GaN growth in strong N-rich condition, has been developed to achieve the selective growth of the NCs. Micro-cathodoluminescence measurements have demonstrated pronounced emission from the InGaN insertions in 450-600 nm spectral range. The optically isolated NCs can be used as effective nano-emitters operating in the visible range.
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| 4. |
- Shubina, T. V., et al.
(author)
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III-nitride microcrystal cavities with quasi whispering gallery modes grown by molecular beam epitaxy
- 2016
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In: Physica status solidi. B, Basic research. - : WILEY-V C H VERLAG GMBH. - 0370-1972 .- 1521-3951. ; 253:5, s. 845-852
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Journal article (peer-reviewed)abstract
- This paper analyzes current trends in fabrication of III-nitride microresonators exploiting whispering gallery modes. Novel cup-cavities are proposed and their fabrication from GaN and InN by molecular beam epitaxy on patterned substrates is described. These cup-cavities can concentrate the mode energy in a subwavelength volume. Their mode energies are stable up to room temperature, being identical in large microcrystals. In these cavities, mode switching can be realized by means of refractive index variation. Cup-cavity modes, being inferior to plasmonic resonances in the respect of integral emission enhancement, have advantages for spectrally selective amplification of quantum transitions in site-controlled nano-emitters. (C) 2016 WILEY-VCH Verlag GmbH amp; Co. KGaA, Weinheim
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| 5. |
- Toropov, A. A., et al.
(author)
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AlGaN Nanostructures with Extremely High Room-Temperature Internal Quantum Efficiency of Emission Below 300 nm
- 2017
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In: Journal of Electronic Materials. - : SPRINGER. - 0361-5235 .- 1543-186X. ; 46:7, s. 3888-3893
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Journal article (peer-reviewed)abstract
- We present theoretical optimization of the design of a quantum well (QW) heterostructure based on AlGaN alloys, aimed at achievement of the maximum possible internal quantum efficiency of emission in the mid-ultraviolet spectral range below 300 nm at room temperature. A sample with optimized parameters was fabricated by plasma-assisted molecular beam epitaxy using the submonolayer digital alloying technique for QW formation. High-angle annular dark-field scanning transmission electron microscopy confirmed strong compositional disordering of the thus-fabricated QW, which presumably facilitates lateral localization of charge carriers in the QW plane. Stress evolution in the heterostructure was monitored in real time during growth using a multibeam optical stress sensor intended for measurements of substrate curvature. Time-resolved photoluminescence spectroscopy confirmed that radiative recombination in the fabricated sample dominated in the whole temperature range up to 300 K. This leads to record weak temperature-induced quenching of the QW emission intensity, which at 300 K does not exceed 20% of the low-temperature value.
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| 6. |
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| 7. |
- Shevchenko, E. A., et al.
(author)
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AlGaN Quantum Well Heterostructures for Mid-Ultraviolet Emitters with Improved Room Temperature Quantum Efficiency
- 2014
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In: Acta Physica Polonica. A. - : POLISH ACAD SCIENCES INST PHYSICS. - 0587-4246 .- 1898-794X. ; 126:5, s. 1140-1142
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Journal article (peer-reviewed)abstract
- We report on optical studies of exciton localization and recombination kinetics in two single 2.2 nm thick AlxGa1-xN/Alx+0.1Ga0.9-xN quantum well structures (x = 0.55 and 0.6) grown by plasma assisted molecular beam epitaxy on a c-sapphire substrate. Strong localization potential inherent for both the quantum well and barrier regions results in merging of the quantum well and barrier emission spectra into a single broad line centered at 285 nm (x = 0.55) and 275 nm (x = 0.6). Time-resolved photoluminescence measurements revealed surprising temperature stability of the photoluminescence decay time constant (approximate to 400 ps) relevant to the recombination of the quantum well localized excitons. This observation implies nearly constant quantum efficiency of the quantum well emission in the whole range from 4.6 to 300 K.
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| 8. |
- Toropov, A. A., et al.
(author)
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AlGaN nanostructures with extremely high quantum yield at 300 K
- 2016
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In: Physics of the solid state. - : MAIK NAUKA/INTERPERIODICA/SPRINGER. - 1063-7834 .- 1090-6460. ; 58:11, s. 2261-2266
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Journal article (peer-reviewed)abstract
- Theoretical optimization of a quantum well heterostructure based on AlGaN solid solutions is implemented in order to attain the maximum charge carrier activation energy and the maximum exciton binding energy at a radiation wavelength of similar to 300 nm. An optimized structure sample with the radiative recombination dominating over the temperature range of 5 to 300 K and the room temperature internal quantum yield as high as 80% of the value measured at 5 K has been manufactured via plasma-assisted molecular beam epitaxy.
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| 9. |
- Toropov, A. A., et al.
(author)
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Exciton recombination in spontaneously formed and artificial quantum wells AlxGa1-xN/AlyGa1-yN (x < y similar to 0.8)
- 2016
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In: PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 13 NO 5-6. - : WILEY-V C H VERLAG GMBH. ; , s. 232-238
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Conference paper (peer-reviewed)abstract
- We report on photoluminescence (PL) spectroscopy and electron microscopy studies of an AlGaN quantum well (QW) structure grown by molecular beam epitaxy under metal-rich conditions with substrate rotation. Both techniques reveal unintentional formation within the AlGaN barriers of a quasiperiodic structure of thin Ga-rich layers, whose period is controlled by both the substrate rotation rate and the AlGaN growth rate. These compositional modulations act as 1-3 monolayer thick QWs emitting below 250 nm with an internal quantum efficiency (IQE) as high as similar to 30% at room temperature under weak excitation. Variational calculations of the QW exciton properties indicate that the observed high IQE can result from strong three-dimensional localization of the excitons confined in the narrow QWs. (C) 2016 WILEY-VCH Verlag GmbH amp; Co. KGaA, Weinheim
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| 10. |
- Toropov, A. A., et al.
(author)
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Suppression of the quantum-confined Stark effect in AlxGa1-xN/AlyGa1-yN corrugated quantum wells
- 2013
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In: Journal of Applied Physics. - : American Institute of Physics (AIP). - 0021-8979 .- 1089-7550. ; 114:12
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Journal article (peer-reviewed)abstract
- We report comparative studies of 6-nm-thick AlxGa1-xN/AlyGa1-yN pyroelectric quantum wells (QWs) grown by plasma-assisted molecular beam epitaxy on c-sapphire substrates with a thick AlN buffer deposited under different growth conditions. The Al-rich growth conditions result in a 2D growth mode and formation of a planar QW, whereas the N-rich conditions lead to a 3D growth mode and formation of a QW corrugated on the size scale of 200-300 nm. Time-resolved photoluminescence (PL) measurements reveal a strong quantum-confined Stark effect in the planar QW, manifested by a long PL lifetime and a red shift of the PL line. In the corrugated QW, the emission line emerges 200 meV higher in energy, the low-temperature PL lifetime is 40 times shorter, and the PL intensity is stronger (similar to 4 times at 4.5K and similar to 60 times at 300 K). The improved emission properties are explained by suppression of the quantum-confined Stark effect due to the reduction of the built-in electric field within the QW planes, which are not normal to the [0001] direction, enhanced carrier localization, and improved efficiency of light extraction.
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| 11. |
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| 12. |
- Buyanova, M., et al.
(author)
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Multi-Phase Regimes of Multipactor Breakdown
- 2005
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In: Proc. 5th International Workshop on Multipactor, Corona and Passive Intermodulation, September 12 – 14, 2005, ESTEC, Noordwijk, The Netherlands, In: Space RF Hardware (MULCOPIM' 2005). ; , s. 135-142
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Conference paper (peer-reviewed)
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| 13. |
- Generalov, A., et al.
(author)
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Strong spin-orbit coupling in the noncentrosymmetric Kondo lattice
- 2018
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In: Physical Review B. - 2469-9950. ; 98:11
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Journal article (peer-reviewed)abstract
- Strong spin-orbit coupling (SOC) in combination with a lack of inversion symmetry and exchange magnetic interaction proves to be a sophisticated instrument allowing efficient control of the spin orientation, energy and trajectories of two-dimensional (2D) electrons and holes trapped at surfaces or interfaces. Exploiting Kondo-related phenomena and crystal-electric-field effects at reduced dimensionalities opens new opportunities to handle their spin-dependent properties offering novel functionalities. We consider here a 2D Kondo lattice represented by a Si-Ir-Si-Yb (SISY) surface block of the heavy-fermion material YbIr2Si2. We show that the Kondo interaction with 4f moments allows finely tuning the group velocities of the strongly spin-polarized carriers in 2D itinerant states of this noncentrosymmetric system. To unveil the peculiarities of this interaction, we used angle-resolved photoemission measurements complemented by first-principles calculations. We established that the strong SOC of the Ir atoms induces spin polarization of the 2D states in SISY block, while the 2D lattice of Yb 4f moments acts as a source for coherent f-d interplay. The strong SOC and lack of inversion symmetry turn out to lead not only to the anticipated Rashba-like splitting of the 2D states, but also to spin splitting of the 4f Kramers doublets. They couple temperature-dependently to the spin-polarized 2D states and thereby guide the properties of the latter.
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| 14. |
- Schulz, Susanne, et al.
(author)
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Emerging 2D-ferromagnetism and strong spin-orbit coupling at the surface of valence-fluctuating EuIr2Si2
- 2019
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In: npj Quantum Materials. - : Springer Science and Business Media LLC. - 2397-4648. ; 4:1
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Journal article (peer-reviewed)abstract
- The development of materials that are non-magnetic in the bulk but exhibit two-dimensional (2D) magnetism at the surface is at the core of spintronics applications. Here, we present the valence-fluctuating material EuIr2Si2, where in contrast to its non-magnetic bulk, the Si-terminated surface reveals controllable 2D ferromagnetism. Close to the surface the Eu ions prefer a magnetic divalent configuration and their large 4f moments order below 48 K. The emerging exchange interaction modifies the spin polarization of the 2D surface electrons originally induced by the strong Rashba effect. The temperature-dependent mixed valence of the bulk allows to tune the energy and momentum size of the projected band gaps to which the 2D electrons are confined. This gives an additional degree of freedom to handle spin-polarized electrons at the surface. Our findings disclose valence-fluctuating rare-earth based materials as a very promising basis for the development of systems with controllable 2D magnetic properties which is of interest both for fundamental science and applications.
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| 15. |
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| 16. |
- Usachov, D. Yu, et al.
(author)
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Cubic Rashba Effect in the Surface Spin Structure of Rare-Earth Ternary Materials
- 2020
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In: Physical Review Letters. - 0031-9007. ; 124:23
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Journal article (peer-reviewed)abstract
- Spin-orbit interaction and structure inversion asymmetry in combination with magnetic ordering is a promising route to novel materials with highly mobile spin-polarized carriers at the surface. Spin-resolved measurements of the photoemission current from the Si-terminated surface of the antiferromagnet TbRh2Si2 and their analysis within an ab initio one-step theory unveil an unusual triple winding of the electron spin along the fourfold-symmetric constant energy contours of the surface states. A two-band k·p model is presented that yields the triple winding as a cubic Rashba effect. The curious in-plane spin-momentum locking is remarkably robust and remains intact across a paramagnetic-antiferromagnetic transition in spite of spin-orbit interaction on Rh atoms being considerably weaker than the out-of-plane exchange field due to the Tb 4f moments.
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| 17. |
- Kaminska, Agata, et al.
(author)
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Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers : Experimental and ab initio analysis
- 2020
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 117:23
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Journal article (peer-reviewed)abstract
- We report defect-related photoluminescence (PL) and its vacuum ultraviolet photoluminescence excitation (PLE) spectra of aluminum nitride layers with various layer thicknesses and dislocation densities grown on two different substrates: sapphire and silicon. The defect-related transitions have been distinguished and examined in the emission and excitation spectra investigated under synchrotron radiation. The broad PL bands of two defect levels in the AlN were detected at around 3 eV and 4 eV. In the PLE spectra of these bands, a sharp excitonic peak originating most probably from the A-exciton of AlN was clearly visible. Taking into account the exciton binding energy, the measurements allow determination of the bandgaps of the investigated AlN samples and their temperature dependencies. Next, they are compared with the literature data obtained by other experimental techniques for bulk AlN crystals and layers grown on different substrates. The obtained results revealed that the AlN bandgap depends on the substrate. The theoretical analysis using density functional theory calculations showed that the effect is induced by the tetragonal strain related to the lattice mismatch between the substrate and the AlN layer, which has a strong influence on the spectral positions of the intrinsic excitons, and consequently on the bandgap of AlN layers.
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