SwePub - search: WFRF:(Nilsson Per Åke 1964)

Enumeration	Reference	Cover	Find
1.	Andersson, Kristoffer, 1976, et al. (author) Fabrication and characterization of field-plated buried-gate SiC MESFETs 2006 In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 27:7, s. 573-575 Journal article (peer-reviewed)abstract Silicon carbide (SiC) MESFETs were fabricated using a standard SiC MESFET structure with the application of the "buried-channel" and field-plate (FP) techniques in the process. FPs combined with a buried-gate are shown to be favorable concerning output power density and power-added efficiency (PAE), due to higher breakdown voltage and decreased output conductance. A very high power density of 7.8 W/mm was measured on-wafer at 3 GHz for a two-finger 400-/spl mu/m gate periphery SiC MESFET. The PAE for this device was 70% at class AB bias. Two-tone measurements at 3 GHz /spl plusmn/ 100 kHz indicate an optimum FP length for high linearity operation.
2.	Nilsson, Per-Åke, 1964, et al. (author) Influence of Field Plates and Surface Traps on Microwave Silicon Carbide MESFETs 2008 In: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 55:8, s. 1875-1879 Journal article (peer-reviewed)abstract The influence of field plates and surface traps on silicon carbide MESFETs for microwave operation was investigated. By increasing the length of gate-connected field plates from 50 to 800 nm, it was possible to increase the gate–drain breakdown voltage of the devices from 125 to 170 V. At the same time, the current slump effect of traps in the passivation oxide was reduced. By using a combination of field plates and a passivation oxide with low interface trap density, it was possible to reach an output power density of 8 W/mm at 3 GHz.
3.	Nilsson, Per-Åke, 1964, et al. (author) Influence of Passivation Oxide Properties on SiC Field-plated Buried Gate MESFETs 2009 In: Materials Science Forum. - 1662-9752 .- 0255-5476. ; 600-603, s. 1103-1106 Journal article (peer-reviewed)
4.	Nilsson, Per-Åke, 1964, et al. (author) Output Power Density and Breakdown Voltage in Field-Plated Buried Gate Microwave SiC MESFETs 2008 In: GigaHertz Symposium 2008. ; , s. 78- Conference paper (peer-reviewed)
5.	Sudow, Mattias, 1980, et al. (author) The Chalmers microstrip SiC MMIC Process 2005 In: Conference Proceedings Gighahertz 2005. Conference paper (peer-reviewed)abstract A generic microstrip MMIC process targeted for SiC and GaN technology has beendeveloped. Passive components for high power operation were developed and verified. Circuit modelsfor both passive and active components have been formulated. Using the developed MMIC process anamplifier and a limiter have been manufactured.
6.	Cha, Eunjung, 1985, et al. (author) Cryogenic low-noise InP HEMTs: A source-drain distance study 2016 In: 2016 Compound Semiconductor Week, CSW 2016. - 9781509019649 ; , s. Article number 7528576- Conference paper (peer-reviewed)abstract The scaling effect of the source-drain distance was investigated in order to improve the performance of low-noise InP HEMTs at cryogenic temperatures 4-15 K. The highest dc transconductance at an operating temperature of 4.8 K and low bias power was achieved at a source-drain distance of 1.4 mu m. The extracted HEMT minimum noise temperature was 0.9 K at 5.8 GHz for a 3-stage 4-8 GHz hybrid low-noise amplifier at 10 K.
7.	Dochev, Dimitar Milkov, 1981, et al. (author) DC and RF performance of MESFET mode 4H-SiC Static Induction transistor 2005 In: GHz2005. Conference paper (peer-reviewed)
8.	Fagerlind, Martin, 1980, et al. (author) GaN Device and MMIC development at Chalmers 2008 In: Gigahertz Symposium 2008, Abstract book. ; , s. 86- Conference paper (peer-reviewed)
9.	Gudjonsson, Gudjon, 1973, et al. (author) Design and Fabrication of 4H-SiC RF MOSFETs 2007 In: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 54:12, s. 3138-3145 Journal article (peer-reviewed)abstract We present simulations, fabrication and analysis of 4H-SiC RF power MOSFETs. We obtain an extrinsic transition frequency of 11.2 GHz and an f max = 11.9 GHz, a breakdown voltage above 200 V and an output power of 1.9 W/mm at 3 GHz. The measured devices are double fingered, source-gate-draingate-source with 2 × 0.4 mm total gate width and the nominal channel length of the devices is 0.5 μm. To the authors knowledge, this is the highest transition frequency and output power density ever reported for SiC RF MOSFETs. The antipunchthrough is introduced as a way to take advantage of the SiC's material properties. A detailed description of the device processing is also given. © 2007 IEEE.
10.	Gudjonsson, Gudjon, 1973, et al. (author) Fabrication of high power-density SiC MOSFETs 2005 In: Proceedings of the GHz 2005 conference, Uppsala, Sweden. Conference paper (other academic/artistic)
11.	Gudjonsson, Gudjon, 1973, et al. (author) Field effect mobility in n-channel Si face 4H-SiC MOSFET with gate oxide grown on aluminium ion-implanted material 2005 In: Materials Science Forum. ; 483-485, s. 833-836 Journal article (peer-reviewed)
12.	Gudjonsson, Gudjon, 1973, et al. (author) High field effect mobility in n-channel Si face 4H-SiC MOSFETs with gate oxide grown on aluminum ion-implanted material 2005 In: IEEE Electron Device Letters. ; 26:2, s. 96-98 Journal article (peer-reviewed)
13.	Gudjonsson, Gudjon, 1973, et al. (author) High Frequency 4H-SiC MOSFETs 2007 In: Materials Science Forum. - 1662-9752 .- 0255-5476. ; 556-557, s. 795-798 Conference paper (peer-reviewed)
14.	Gudjonsson, Gudjon, 1973, et al. (author) High Power Density 4H-SiC RF MOSFETs 2006 In: IEEE Electron Device Letters. ; 527-529, s. 1277-1280 Journal article (peer-reviewed)
15.	Hjelmgren, Hans, 1960, et al. (author) Electro-thermal simulations of a microwave 4H-SiC MESFET on high purity semi-insulating substrate 2007 In: Solid-State Electronics. - : Elsevier BV. - 0038-1101. ; 51:8, s. 1144-1152 Journal article (peer-reviewed)abstract DC and small-signal electro-thermal simulations of a 4H-SiC microwave power MESFET on a high purity semi-insulating substrate are compared to measurements. The focus is on the electron transport, substrate traps, and thermal heating. The doping concentrations are described by measured SIMS profiles, and the material parameters are in accordance with published results. Although the simulated MESFET has a p-buffer and a high purity substrate, the simulations show that the density of shallow traps affects the device characteristics.The very good agreement between simulated and measured DC and small-signal characteristics indicates that the models for electron mobility, substrate traps, and heating are the most important to achieve good agreement with measured data.
16.	Hjelmgren, Hans, 1960, et al. (author) Transient Simulation of Microwave SiC MESFETs With Improved Trap Models 2010 In: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 57:3, s. 729-732 Journal article (peer-reviewed)abstract Measured and simulated transient characteristics ofa SiC metal–semiconductor field-effect transistor are compared. Self-heating, gate tunneling, substrate, and surface traps are taken into account in the simulations. By explicitly filling surface traps at the vicinity of the gate during pinchoff, close correspondence between simulated and measured gate lags is achieved.
17.	Nilsson, Per-Åke, 1964, et al. (author) An InP MMIC process optimized for low noise at Cryo 2014 In: Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC. - 1550-8781. - 9781479936229 Conference paper (peer-reviewed)abstract An InP MMIC process was developed and optimized for ultra-low noise amplifiers (LNAs) operating at cryogenic temperature. The amplifiers from the process are working up to 100 GHz. The processed wafers are 4" and can carry more than 4000 3-stage units. For a significant number of 6-20 GHz 3-stage LNAs we have measured an average noise temperature of 5.8 K at ambient temperature of 10 K, state of the art in this frequency range, and 66.3 K at 300K. Associated gain was 35.9 dB (10K) and 33.2 dB (300 K). The standard deviation at room temperature for 47 LNAs was 1.5 K for the noise and 0.3 dB for the gain.
18.	Nilsson, Per-Åke, 1964, et al. (author) Cryogenic Low Noise Amplifiers in an InP HEMT MMIC Process 2016 In: Asia-Pacific Microwave Conference, APMC 2015, Nanjing, China, 6-9 December 2015. ; 1, s. Art. no. 7411746- Conference paper (peer-reviewed)abstract An indium phosphide HEMT MMIC process was developed for ultralow noise amplifiers (LNAs) at cryogenic temperatures. The process was run on 4” wafers and utilized 130 nm gate-length HEMTs. Several wide band LNAs were made in a frequency range between 1 GHz and 100 GHz. A Ka band LNA had a minimum noise temperature of 10 K and a gain of 35 dB.
19.	Nilsson, Per-Åke, 1964, et al. (author) SiC MESFET with a Double Gate Recess 2006 In: Materials Science Forum. ; 527-529, s. 1227-1230 Conference paper (peer-reviewed)
20.	Olafsson, Halldor, 1972, et al. (author) High field effect electron mobility in Si face 4H-SiC MOSFET 2004 In: Electronics Letters. ; 40, s. 508-510 Journal article (peer-reviewed)
21.	Schleeh, Joel, 1986, et al. (author) Cryogenic 0.5-13 GHz low noise amplifier with 3 K mid-band noise temperature 2012 In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781467310871 Conference paper (peer-reviewed)abstract A 0.5-13 GHz cryogenic MMIC low-noise amplifier (LNA) was designed and fabricated using a 130 nm InP HEMT process. A packaged LNA has been measured at both 300 K and 15 K. At 300 K the measured minimum noise temperature was 48 K at 7 GHz. At 15 K the measured minimum noise temperature was 3 K at 7 GHz and below 7 K within the entire 0.5-13 GHz band. The gain was between 34 dB and 40 dB at 300 K and between 38 dB and 44 dB at 4 K.
22.	Schleeh, Joel, 1986, et al. (author) Cryogenic LNAs for SKA band 2 to 5 2017 In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 164-167 Conference paper (peer-reviewed)abstract Four ultra-low noise cryogenic MMIC LNAs suitable for the Square Kilometer Array (SKA) band 2 to 5 (0.95-13.8 GHz) have been designed, fabricated, packaged and tested. The LNAs are based on 4×50, 8×50 and 16×50 μm HEMTs, designed for stable cryogenic operation, allowing the combination of good noise performance and return loss. The lowest noise temperatures measured in the four bands were 1.0 K, 1.2 K, 1.6 K and 2.6 K, respectively.
23.	Schleeh, Joel, 1986, et al. (author) Passivation of InGaAs/InAlAs/InP HEMTs using Al2O3 atomic layer deposition 2011 In: Conference Proceedings - International Conference on Indium Phosphide and Related Materials. 2011 Compound Semiconductor Week and 23rd International Conference on Indium Phosphide and Related Materials, CSW/IPRM 2011, Berlin, 22-26 May 2011. - 1092-8669. - 9781457717536 Conference paper (peer-reviewed)abstract InGaAs/InAlAs/InP HEMTs (InP HEMTs) passivated by Al2O3 atomic layer deposition (ALD) demonstrated improved DC performance compared to Si3N4 plasma enhanced chemical vapour deposition (PECVD). DC measurements have been performed on 130 nm gate-length devices before and after passivation. An increase in maximum drain current density of 20% and extrinsic transconductance of 30% were observed after both ALD and PECVD device passivation. In comparison to PECVD passivated InP HEMTs, ALD passivated devices demonstrated a full suppression of a kink in the I-V characteristics associated with surface traps.
24.	Schleeh, Joel, 1986, et al. (author) Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz 2012 In: IEEE Electron Device Letters. - : Institute of Electrical and Electronics Engineers (IEEE). - 0741-3106 .- 1558-0563. ; 33:5, s. 664-666 Journal article (peer-reviewed)abstract We present in this letter an InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT) with record noise temperature at very low dc power dissipation. By minimizing parasitic contact and sheet resistances and the gate current, a 130-nm-gate-length InP HEMT was optimized for cryogenic low-noise operation. When integrated in a 4- to 8-GHz three-stage hybrid low-noise amplifier operating at 10 K, a noise temperature of 1.2 K +/- 1.3 K at 5.2 GHz was measured. The gain of the amplifier across the entire band was 44 dB, consuming only 4.2 mW of dc power. The extracted minimum noise temperature of the InP HEMT was 1 K at 6 GHz.
25.	Sudow, Mattias, 1980, et al. (author) A highly linear double balanced Schottky diode S-band mixer 2006 In: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 16:6, s. 336 - 8 Journal article (peer-reviewed)abstract A high-level double balanced SiC Schottky diode mixer in SiC monolithic microwave integrated circuit (MMIC) technology has been designed, processed and characterized. The mixer is a single ended in- and output circuit with coupled transformers as baluns to enable a compact design, resulting in a total area of 2.2×2.2mm2. The mixer has a maximum IIP3 of 38dBm and IIP2 of 58dBm at 3.3GHz, and a typical P1 dB of 23dBm in the S-band. The minimum conversion loss was 12dBm at 2.4GHz. The high power operation of the mixer shows that SiC MMIC can perform well in high microwave radiation environments
26.	Sudow, Mattias, 1980, et al. (author) A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer 2008 In: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 56:10, s. 2201-2206 Journal article (peer-reviewed)abstract A broadband highly linear X-band mixer in AlGaN/GaN monolithic microwave integrated circuit technology has been designed, processed, and characterized. The design is based on a 4 times 100 mum AlGaN/GaN HEMT in a single-ended circuit topology. The mixer has an IF bandwidth of 2 GHz with a conversion loss (CL) of
27.	Sudow, Mattias, 1980, et al. (author) An AlGaN/GaN HEMT-Based Microstrip MMIC Process for Advanced Transceiver Design 2008 In: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 56:8, s. 1827-1833 Journal article (peer-reviewed)abstract A MMIC process in AlGaN/GaN technology for advanced transceiver design has been developed. The process is based on microstrip technology with a complete model library of passive elements and AlGaN/GaN HEMTs. The transistor technology in this process is suitable for both power and low noise design, demonstrated with a power density of 5 W/mm, and an ${rm NF}_{min}$ of 1.4 dB at $X$ -band. Process stability of subcircuits, complementary to power amplifiers and LNAs, in a transceiver system have been investigated. The results indicate that an all AlGaN/GaN MMIC transceiver is realizable using this technology.
28.	Sudow, Mattias, 1980, et al. (author) An SiC MESFET-based MMIC process 2006 In: IEEE Transactions on Microwave Theory and Techniques. ; 54:12, Part 1, s. 4072-4078 Journal article (peer-reviewed)abstract A monolithic microwave integrated circuit (MMIC)process based on an in-house SiC MESFET technology has been developed. The process uses microstrip technology, and a complete set of passive components, including MIMcapacitors, spiral inductors,thin-film resistors, and via-holes, has been developed. The potential of the process is demonstrated by an 8-W power amplifierat 3 GHz, a high-linearity -band mixer showing a third-order intercept point of 38 dBm, and a high-power limiter.
29.	Sudow, Mattias, 1980, et al. (author) Planar Schottky Microwave Diodes on 4H-SiC 2005 In: Materials Science Forum. - 1662-9752 .- 0255-5476. ; 483-485, s. 937-940 Conference paper (peer-reviewed)abstract Planar microwave Schottky diodes on 4H-SiC have been designed, processed and measured. Different Schottky metals were tested to study the influence on the microwave performance. A maximum extrinsic cut-off frequency of 30.8 GHz was achieved for a tungsten/SiC-Schottky diode. The diode geometry dependence on both the cut-off frequency and the breakdown voltage was investigated. The breakdown voltage was found to be linearly dependent on the anode-cathode distance
30.	Sudow, Mattias, 1980, et al. (author) Planar SiC Schottky Diodes for MMIC Applications 2004 In: Conference Proceedings. 34th European Microwave Conference (IEEE Cat. No.04EX963). ; 1, s. 153-156 Journal article (peer-reviewed)abstract Planar Schottky diodes intended for SiC MMIC applications have been designed, processed and characterised. To our knowledge, this is the first article published on this type of device. The planar design is beneficial since semi-insulating substrates are used in microwave designs to minimise parasitics. The component geometry was studied and a simple distributed model was formulated. Extrinsic cut-off frequencies up to 30.8 GHz were calculated from LCR-measurements.
31.	Sudow, Mattias, 1980, et al. (author) SiC varactors for dynamic load modulation of high power amplifiers 2008 In: IEEE Electron Device Letters. - 0741-3106 .- 1558-0563. ; 29:7, s. 728-730 Journal article (peer-reviewed)abstract SiC Schottky diode varactors with a high breakdown voltage, a high tuning ratio, and a low series resistance have been designed and fabricated. These characteristics are particularly necessary for the dynamic load modulation of high power amplifiers (PAs), which is an attractive alternative to other efficiency enhancement techniques. For a SiC Schottky diode varactor with a 50-µm radius fabricated by using a graded doping profile, a breakdown voltage of 40 V, a tuning range of 5.6, and a series resistance of 0.9 O were achieved. The results show the great potential of this type of varactors for the use in the dynamic load modulation of high power amplifiers. © 2008 IEEE.
32.	Sveinbjörnsson, Einar, 1964, et al. (author) High channel mobility 4H-SiC MOSFETs 2006 In: Materials Science Forum. ; 527-529, s. 961-966 Conference paper (peer-reviewed)
33.	Sveinbjörnsson, Einar, 1964, et al. (author) High field effect mobility in Si face 4H-SiC MOSFET made on sublimation grown epitaxial material 2005 In: Materials Science Forum. ; 483-485, s. 841-844 Journal article (peer-reviewed)
34.	Thorsell, Mattias, 1982, et al. (author) Characterization of the temperature dependent access resistances in AlGaN/GaN HEMTs 2008 In: Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, 2008. INMMIC 2008.. - 9781424426454 ; , s. 17-20 Conference paper (peer-reviewed)abstract The temperature dependence of the access resistances for AlGaN/GaN HEMTs is investigated. The self-heating is measured using infrared microscopy and the access resistances are extracted at different ambient temperatures. Their influence on the intrinsic small signal parameters is studied versus bias and ambient temperature.
35.	Thorsell, Mattias, 1982, et al. (author) Thermal characterization of the intrinsic noise parameters for AlGaN/GaN HEMTs 2008 In: International Microwave Symposium Digest, 2008, Atlanta. - 0149-645X. - 9781424417810 ; , s. 463-466 Conference paper (peer-reviewed)abstract The noise parameters of AlGaN/GaN-HEMTs are measured between 298 K and 423 K. The temperature dependent access resistances are de-embedded and the intrinsic noise parameters are studied as a function of temperature. It is shown that the parasitic access resistances are limiting the highfrequency noise performance of the AlGaN/GaN-HEMT.The intrinsic noise sources are extracted and a noise model is derived and verified for a MMIC amplifier.
36.	Thorsell, Mattias, 1982, et al. (author) Thermal Study of the High-Frequency Noise in GaN HEMTs 2009 In: IEEE Transactions on Microwave Theory and Techniques. - 0018-9480 .- 1557-9670. ; 57:1, s. 19-26 Journal article (peer-reviewed)abstract The high-frequency noise performance of the GaN HEMT is studied for temperatures between 297–398 K. The access resistances ${ R}_{ S}$ and ${ R}_{ D}$ have a limiting effect on the noise performance, and in this paper, their temperature dependence is studied in detail for a ${hbox{2}}times {hbox{100}} mu{hbox{m}}$ GaN HEMT. ${ R}_{ S}$ and ${ R}_{ D}$ show an increase of 0.71 and 0.86 %/K, respectively. The self-heating effect due to dissipated power is also studied to allow accurate intrinsic small-signal and noise parameter extraction. The thermal resistance is measured by infrared microscopy. Based on these results, a temperature dependent noise model including self-heating and temperature-dependent access resistances is derived and verified with measurements.
37.	Westlund, Andreas, 1985, et al. (author) Graphene self-switching diodes as zero-bias microwave detectors 2015 In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 106:9, s. 093116- Journal article (peer-reviewed)abstract Self-switching diodes (SSDs) were fabricated on as-grown and hydrogen-intercalated epitaxial graphene on SiC. The SSDs were characterized as zero-bias detectors with on-wafer measurements from 1 to 67 GHz. The lowest noise-equivalent power (NEP) was observed in SSDs on the hydrogen-intercalated sample, where a flat NEP of 2.2 nW/Hz½ and responsivity of 3.9 V/W were measured across the band. The measured NEP demonstrates the potential of graphene SSDs as zero-bias microwave detectors.
38.	Angelov, Iltcho, 1943, et al. (author) On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs 2005 In: Proceedings of the GAAS05 conference. Conference paper (peer-reviewed)
39.	Carpenter, Sona, 1983, et al. (author) A G-Band (140-220 GHz) planar stubbed branch-line balun in BCB technology 2013 In: 2013 3rd Asia-Pacific Microwave Conference, APMC 2013, Seoul, South Korea, 5-8 November 2013. - 9781479914746 ; , s. 273-275 Conference paper (peer-reviewed)abstract A G-Band planar stubbed branch-line balun isdesigned and fabricated in 3μm thick BCB technology. Thistopology of the balun does not need thru-substrate via hole orthin-film resistor which makes it extremely suitable for realizationon single-layer high-resistivity substrates commonly used atmillimeter-wave or post-processed BCB layers on top of standardsemi-insulating wafers. The design is simulated and validated bymeasurements. Measurement results on two fabricated back-tobackbaluns show better than 10 dB input and output return lossand 3.2 dB insertion loss from 140 to 220 GHz.
40.	Cha, Eunjung, 1985, et al. (author) Two-Finger InP HEMT Design for Stable Cryogenic Operation of Ultra-Low-Noise Ka- and Q-Band LNAs 2017 In: IEEE Transactions on Microwave Theory and Techniques. - : Institute of Electrical and Electronics Engineers (IEEE). - 0018-9480 .- 1557-9670. ; 65:12, s. 5171-5180 Journal article (peer-reviewed)abstract We investigate the cryogenic stability of two-finger 100-nm gate-length InP HEMTs aimed for Ka- and Q-band ultra-low noise amplifiers (LNAs). InP HEMTs with unit gate widths ranging between 30 and 50 mu m exhibit unstable cryogenic behavior with jumps in drain current and discontinuous peaks in transconductance. We also find that shorter gate length enhances the cryogenic instability. We demonstrate that the instability of two-finger transistors can be suppressed by either adding a source air bridge, connecting the back end of gates, or increasing the gate resistance. A three-stage 24-40 GHz and a four-stage 28-52-GHz monolithic microwave-integrated circuit LNA using the stabilized InP HEMTs are presented. The Ka-band amplifier achieves a minimum noise temperature of 7 K at 25.6 GHz with an average noise temperature of 10.6 K at an ambient temperature of 5.5 K. The amplifier gain is 29 dB +/- 0.6 dB. The Q-band amplifier exhibits minimum noise temperature of 6.7 K at 32.8 GHz with average noise temperature of 10 K at ambient temperature of 5.5 K. The amplifier gain is 34 dB +/- 0.8 dB. To our knowledge, the Ka- and Q-band amplifiers demonstrate the lowest noise temperature reported so far for InP cryogenic LNAs.
41.	Cha, Eunjung, 1985, et al. (author) Two-finger InP HEMT design for stable cryogenic operation of ultra-low-noise Ka-band LNAs 2017 In: IEEE MTT-S International Microwave Symposium Digest. - 0149-645X. - 9781509063604 ; , s. 168-171 Conference paper (peer-reviewed)abstract We have investigated the cryogenic stability of two-finger InP HEMTs aimed for Ka-band ultra-low noise amplifiers (LNAs). Unlike two-finger transistors with a large gate-width above 2 χ 50 μm, the transistors with a small gate-width exhibit unstable cryogenic behavior. The instability is suppressed by adding a source air-bridge. The stabilizing effect of the air-bridge is demonstrated both on device and circuit level. A three-stage 2440 GHz monolithic microwave integrated circuit (MMIC) LNA using a stabilized 100-nm HEMT technology is presented. The amplifier achieves a record noise temperature of 7 K at 25.6 GHz with an average noise of 10.6 K across the whole band at an ambient temperature of 5.5 K. The amplifier gain is 29 dB ± 0.6 dB exhibiting very stable and repeatable operation. To our knowledge, this amplifier presents the lowest noise temperature reported so far for InP cryogenic LNAs covering the Ka-band.
42.	Dambrine, Gilles, et al. (author) Narrow band gap III-V based-FET for ultra low power high frequency analog applications 2009 In: 2009 67th Annual Device Research Conference (DRC). - 9781424435289 ; , s. 149-51 Conference paper (peer-reviewed)
43.	Ducournau, G., et al. (author) 200 GHz communication system using unipolar InAs THz rectifiers 2013 In: International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz. - 2162-2027 .- 2162-2035. - 9781467347174 Conference paper (peer-reviewed)abstract We report on the first use of a THz detector based on InAs rectifying nanochannels in a communication system. The transmitter is composed of an electronic multiplication chain, externally amplitude modulated at the input signal. The system has been driven at 200 GHz and up to 500 Mbps data signals have been transmitted in an indoor configuration. In contrast to most nanodevices, the InAs detector has a low impedance (580 ω) and is therefore easily loaded by 50 ω electronics. The data rate limitation is mainly coming from parasitics coupled in the board. © 2013 IEEE.
44.	Eriksson, Klas, 1983, et al. (author) Suppression of Parasitic Substrate Modes in Multilayer Integrated Circuits 2015 In: IEEE Transactions on Electromagnetic Compatibility. - 0018-9375 .- 1558-187X. ; 57:3, s. 591-594 Journal article (peer-reviewed)abstract Integrated circuits (ICs) with multilayer backend process and a large front-side ground plane support the propagation of parasitic substrate modes. These modes resonate at frequencies that typically are within the bandwidth of circuits operating close to and in the submillimeter-wave range, i.e., beyond 300 GHz. The resonances cause unwanted coupling and feedback, which result in circuit instability and degraded performance for circuits operating in the range of these resonances. A common method to suppress these modes from propagating is to use numerous through-wafer vias distributed over the entire circuit. In this letter, we present a study of substrate modes in multilayer ICs with thin-film microstrip interconnects at 125-330 GHz. We show that a doped Si carrier underneath the circuit effectively eliminates the effect of substrate modes on the circuit functionality. This method requires no backside processed through-wafer vias and no backside metallization.
45.	Harrysson Rodrigues, Isabel, 1993, et al. (author) Magnetic Influence on Cryogenic InP HEMT DC Characteristics 2018 In: CSW 2018 Proceedings. ; , s. 183-183 Conference paper (other academic/artistic)
46.	Harrysson Rodrigues, Isabel, 1993, et al. (author) Magnetic Influence on CryogenicInP HEMT LNAs 2018 Conference paper (other academic/artistic)
47.	L.Q.Zhang,, et al. (author) Fabrication of novel unipolar nanodiodes in InAs/AlSb for microwave detection 2011 In: Infrared, Millimeter and Terahertz Waves (IRMMW-THz), 2011 36th International Conference on. - 2162-2027. - 9781457705083 ; :2-7 Oct. 2011, s. 1-2 Conference paper (peer-reviewed)abstract Abstract—We report on the fabrication of unipolar nanodiodes into an InAs/AlxGa1-xSb quantum-well heterostructure for room temperature microwave detection up to 110 GHz. Electron-beam lithography was combined with both dry- and wet-etching, and we explored the differences in the electric and detection parameters with the two methods.
48.	McCulloch, M. A., et al. (author) Dependence of noise temperature on physical temperature for cryogenic low-noise amplifiers 2017 In: Journal of Astronomical Telescopes, Instruments, and Systems. - : SPIE-Intl Soc Optical Eng. - 2329-4221 .- 2329-4124. ; 3:1 Journal article (peer-reviewed)abstract We present the results of noise-temperature measurements for four radio astronomy MMIC low-noise amplifiers (LNAs) at physical temperatures from 2 to 160 K. We observe and confirm recent reports that the noise temperature of an LNA exhibits a quadratic dependence with respect to the physical temperature. We are also able to confirm the prediction by Pospieszalski that below a certain physical temperature there is no further significant reduction in noise temperature. We then discuss these results in the context of both the Pospieszalski noise model and some recent Monte-Carlo simulations, which have implied that at very low temperatures, heating of the electron channel above ambient temperature may help to explain the behavior of the drain temperature parameter.
49.	Moschetti, Giuseppe, 1982, et al. (author) Anisotropic transport properties in InAs/AlSb heterostructures 2010 In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 97:24, s. 3- Journal article (peer-reviewed)abstract We have investigated the anisotropic transport behavior of InAs/AlSb heterostructures grown on a(001) InP substrate. An electrical analysis showed anisotropic sheet resistance Rsh and electronmobility μn in the two dimensional electron gas (2DEG). Hall measurements demonstrated anenhanced anisotropy in μn when cooled from room temperature to 2 K. High electron mobilitytransistors exhibited 27% higher maximum drain current IDS and 23% higher peak transconductancegm when oriented along the [1-10] direction. The anisotropic transport behavior in the 2DEG wascorrelated with an asymmetric dislocation pattern observed in the surface morphology and bycross-sectional microscopy analysis of the InAs/AlSb heterostructure.
50.	Moschetti, Giuseppe, 1982, et al. (author) Cryogenic InAs/AlSb HEMT Wideband Low-Noise IF Amplifier for Ultra-Low-Power Applications 2012 In: IEEE Microwave and Wireless Components Letters. - 1558-1764 .- 1531-1309. ; 22:3, s. 144-146 Journal article (peer-reviewed)abstract A cryogenic wideband 4-8 GHz hybrid low-noise amplifier, based on a 110 nm gate length InAs/AlSb HEMT process is presented. At room temperature the three-stage amplifier exhibited a transducer gain of 29 dB and a noise temperature of 150 K with 17.6 mW power consumption. When cooled to 13 K, the amplifier showed a minimum noise temperature of 19 K at a power consumption of 6 mW (66% reduction compared to room temperature). At cryogenic temperature, the optimum drain voltage for best noise performance was reduced from 0.55 V down to 0.3 V, demonstrating the very low-power and low-voltage capabilities of InAs/AlSb HEMT based low-noise amplifiers at cryogenic temperature.

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