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| 2. |
- Linnarsson, Margareta K., et al.
(author)
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Influence of layer thickness and primary ion on profile broadening during sputtering of Al0.5Ga0.5As/GaAs structures
- 1994
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In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. - 0168-583X. ; 85:1-4, s. 395-398
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Journal article (peer-reviewed)abstract
- Broadening of secondary ion mass spectrometry depth profiles for Al in Al0.5Ga0.5As/GaAs structures, where the layer thicknesses vary from two monolayers to 1000 Å, is investigated. The experiments were performed in the net primary energy range 1.8–13.2 keV with 40Ar+ ions and 84Kr+ ions. The broadening is mainly determined by ballistic mixing, and no dependence on the Al0.5Ga0.5As layer thickness is revealed. Good agreement is found with a semi-empirical mixing model published recently by Zalm and Vriezema and [Nucl. Instr. and Meth. B 67 (1992) 467] although a small contribution from surface roughness occurs. The surface roughness develops initially but saturates already after the first Al0.5Ga0.5As layer.
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| 3. |
- Linnarsson, Margareta K., et al.
(author)
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Sputter profiling of AlGaAs/GaAs superlattice structures using oxygen and argon ions
- 1993
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In: Applied Surface Science. - 0169-4332 .- 1873-5584. ; 70-71:1, s. 40-43
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Journal article (peer-reviewed)abstract
- Broadening of Al sputter profiles in AlxGa1-xAs/GaAs structures has been investigated using secondary ion mass spectrometry. The depth profiling was carried out with 32O+2 ions and 40Ar+ ions using net primary energies of 1.8, 2.2, 3.2 and 5.7 keV. The decay lengths of the Al profiles show a pronounced increase with increasing sputtering ion energy caused by ballistic mixing. Moreover, in the O+2 case the λ-values degrade with eroded depth, indicating that beam-induced surface roughening takes place during profiling and in particular, this holds for high x-values. The results are discussed in terms of a semi-empirical model for ion-beam-induced broadening developed by Zalm and Vriezema.
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