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- Hurley, P. K., et al.
(author)
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Interface defects in HfO2, LaSiOx, and Gd2O3 high-k/metal-gate structures on silicon
- 2008
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In: Journal of the Electrochemical Society. - : The Electrochemical Society. - 0013-4651 .- 1945-7111. ; 155:2, s. G13-G20
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Journal article (peer-reviewed)abstract
- In this work, we present experimental results examining the energy distribution of the relatively high (> 1 X 10(11) cm(-2)) electrically active interface defects which are commonly observed in high-dielectric-constant (high-k) metal-insulator-silicon systems during high-k process development. This paper extends previous studies on the Si(100)/SiOx/HfO2 system to include a comparative analysis of the density and energy distribution of interface defects for HfO2, lanthanum silicate (LaSiOx), and Gd2O3 thin films on (100) orientation silicon formed by a range of deposition techniques. The analysis of the interface defect density across the energy gap, for samples which experience no H-2/N-2 annealing following the gate stack formation, reveals a peak density (similar to 2 X 10(12) cm(-2) eV(-1) to similar to 1 X 10(13) cm(-2) eV(-1)) at 0.83-0.92 eV above the silicon valence bandedge for the HfO2, LaSiOx, and Gd2O3 thin films on Si (100). The characteristic peak in the interface state density (0.83-0.92 eV) is obtained for samples where no interface silicon oxide layer is observed from transmission electron microscopy. Analysis suggests silicon dangling bond (P-bo) centers as the common origin for the dominant interface defects for the various Si(100)/SiOx/high-k/metal gate systems. The results of forming gas (H-2/N-2) annealing over the temperature range 350-555 degrees C are presented and indicate interface state density reduction, as expected for silicon dangling bond centers. The technological relevance of the results is discussed. (c) 2007 The Electrochemical Society.
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| 3. |
- Piscator, Eva, et al.
(author)
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Low adherence to legislation regarding Do-Not-Attempt-Cardiopulmonary-Resuscitation orders in a Swedish University Hospital
- 2021
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In: Resuscitation Plus. - : Elsevier BV. - 2666-5204. ; 6
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Journal article (peer-reviewed)abstract
- Background The ethical principles of resuscitation have been incorporated into Swedish legislation so that a decision to not attempt cardiopulmonary resuscitation (DNACPR) entails (1) consultation with patient or relatives if consultation with patient was not possible and documentation of their attitudes; (2) consultation with other licensed caregivers; (3) documentation of the grounds for the DNACPR. Our aim was to evaluate adherence to this legislation, explore the grounds for the decision and the attitudes of patients and relatives towards DNACPR orders. Methods We included DNACPR forms issued after admission through the emergency department at Karolinska University Hospital between 1st January and 31st October, 2015. Quantitative analysis evaluated adherence to legislation and qualitative analysis of a random sample of 20% evaluated the grounds for the decision and the attitudes. Results The cohort consisted of 3583 DNACPR forms. In 40% of these it was impossible to consult the patient, and relatives were consulted in 46% of these cases. For competent patients, consultation occurred in 28% and the most common attitude was to wish to refrain from resuscitation. Relatives were consulted in 26% and they mainly agreed with the decision. Grounds for the DNAR decision was most commonly severe chronic comorbidity, malignancy or multimorbidity with or without an acute condition. All requirements of the legislation were fulfilled in 10% of the cases. Conclusion In 90% of the cases physicians failed to fulfil all requirements in the Swedish legislation regarding DNAR orders. The decision was mostly based on chronic, severe comorbidity or multimorbidity.
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| 4. |
- Raeissi, Bahman, 1979, et al.
(author)
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
- 2007
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In: ESSDERC 2007. - 9781424411238 ; , s. 283-286
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Conference paper (peer-reviewed)abstract
- Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd(2)O(3) prepared by MBE and ALD, and for HfO(2) prepared by reactive sputtering, by measuring the frequency dependence of MOS capacitance. The capture cross sections are found to be thermally activated and to increase steeply with the energy depth of the interface electron states. The methodology adopted is considered useful for increasing the understanding of high-k-oxide/silicon interfaces.
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| 5. |
- Raeissi, Bahman, 1979, et al.
(author)
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High-k-oxide/silicon interfaces characterized by capacitance frequency spectroscopy
- 2008
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In: Solid-State Electronics. - : Elsevier BV. - 0038-1101 .- 1879-2405. ; 52:9, s. 1274-1279
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Journal article (peer-reviewed)abstract
- Electron capture into insulator/silicon interface states is investigated for high-k dielectrics of Gd2O3 preparedby molecular beam epitaxy (MBE) and atomic layer deposition (ALD), and for HfO2 prepared byreactive sputtering, by measuring the frequency dependence of Metal Oxide Semiconductor (MOS) capacitance.The capture cross sections are found to be thermally activated and to increase steeply with theenergy depth of the interface electron states. The methodology adopted is considered useful for increasingthe understanding of high-k-oxide/silicon interfaces.
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