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Träfflista för sökning "WFRF:(Polychroniadis Efstathios K.) "

Search: WFRF:(Polychroniadis Efstathios K.)

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1.
  • Marinova, Maya, et al. (author)
  • Influence of Post-Growth Annealing on the Defects Nature and Distribution in VLS Grown (111) 3C-SiC Layers
  • 2011
  • In: Silicon Carbide and Related Materials 2010. ; , s. 241-244
  • Conference paper (peer-reviewed)abstract
    • The current communication focuses on the influence of a post-growth annealing on the evolution of defects inside (111) 3C-SiC layers grown by the Vapour Liquid Solid (VLS) mechanism in SiGe melts on Si-face on- and off axis 6H-SiC substrates. The layers are studied by Transmission Electron Microscopy (TEM) and Low Temperature Photoluminescence (LTPL). It was found that the growth on off-axis substrates results in a 3C-SiC layer containing mainly stacking faults (SFs) and microtwins (MT). The density of MT lamellae and SFs reduces in the layers grown on the on-axis substrate compared to off-axis substrate. In the layers grown on off-axis substrates the annealing strongly reduces the density of SFs inclined to the 3C/6H-SiC interface. Additionally, 3C to 6H polytypic transformation appears only at the interface, most probably starting from substrate step edges. This was only seen on off-axis seed since the step edges are more.
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2.
  • Robert, Teddy, et al. (author)
  • Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers
  • 2011
  • In: <em>Materials Science Forum Vols. 679-680 (2011) pp 314-317</em>. - : Trans Tech Publications Inc.. ; , s. 314-317
  • Conference paper (peer-reviewed)abstract
    • Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects.
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