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Search: WFRF:(Romanini Paolo)

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  • Nilsson, Joakim, et al. (author)
  • S-band discrete and MMIC GaN power amplifiers
  • 2009
  • In: European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 39th European Microwave Conference, EuMC 2009. - 9782874870125 ; , s. 495-498
  • Conference paper (peer-reviewed)abstract
    • The use of GaN devices for microwave power amplifiers begins to be a reality in Europe. This paper describes two S-band (2.7-3.3 GHz) high power amplifier (HPA) designs; one discrete 100 W output stage and one 10 W MMIC power amplifier. The discrete power amplifier is designed using two GaN power bars with a total gate width of 19.2 mm. The GaN power bars have been developed by Selex-SI, within the european co-project Korrigan. The MMIC power amplifier was designed using a 0.25 ?m GaN HEMT process supplied and processed by Chalmers.
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Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Rorsman, Niklas, 196 ... (1)
Nilsson, Joakim (1)
Billström, Niklas (1)
Romanini, Paolo (1)
University
Chalmers University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2009 (1)

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