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Search: WFRF:(Sittig R)

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  • Baus, M, et al. (author)
  • Fabrication of monolithic bidirectional switch devices
  • 2004
  • In: Microelectronic Engineering. - 0167-9317 .- 1873-5568. ; 73-4, s. 463-467
  • Journal article (peer-reviewed)abstract
    • The fabrication scheme of a novel MOS-based power device, a monolithic bidirectional switch (MBS), is presented. This concept allows the integration of a bidirectional switch with the advantages of low power consumption, small package size, and low fabrication costs. Furthermore, device simulations predict a performance benefit for power applications such as matrix converters. In an MBS, the field effect is used to control carrier concentrations in elevated structures made up of nearly intrinsic silicon. A CMOS-compatible nano-fabrication process for the MBS is proposed, employing local oxidation of silicon for self-aligned contact formation. First electrical results are presented. (C) 2004 Elsevier B.V. All rights reserved.
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3.
  • Baus, M., et al. (author)
  • Fabrication of monolithic bidirectional switch (MBS) devices with MOS-controlled emitter structures
  • 2006
  • In: PROCEEDINGS OF THE 18TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS. ; , s. 181-184
  • Conference paper (peer-reviewed)abstract
    • A novel high-voltage power device, the Monolithic Bidirectional Switch (MBS) is investigated in this work. Planar MBS devices have been fabricated by a self-aligned fabrication process using local oxidation of silicon technique and self-aligned sificidation. Results obtained from electrical characterization are compared with numerical simulations. Using highly transparent universal contacts, bidirectional switching with an excellent on/off current ratio is demonstrated. On-current densities of 75 A/cm(2) at V(on) = 3 V have been achieved even in an exploratory device structure. Simulations further demonstrate the high potential of the MBS for future power electronic systems such as the matrix converter.
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