| 1. |
- Gehlen, J., et al.
(author)
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First genome-wide association study of esophageal atresia identifies three genetic risk loci at CTNNA3, FOXF1/FOXC2/FOXL1, and HNF1B
- 2022
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In: Human Genetics and Genomics Advances. - : Elsevier BV. - 2666-2477. ; 3:2
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Journal article (peer-reviewed)abstract
- Esophageal atresia with or without tracheoesophageal fistula (EA/TEF) is the most common congenital malformation of the upper digestive tract. This study represents the first genome-wide association study (GWAS) to identify risk loci for EA/TEF. We used a European case-control sample comprising 764 EA/TEF patients and 5,778 controls and observed genome-wide significant associations at three loci. On chromosome 10q21 within the gene CTNNA3 (p = 2.11 × 10−8; odds ratio [OR] = 3.94; 95% confidence interval [CI], 3.10–5.00), on chromosome 16q24 next to the FOX gene cluster (p = 2.25 × 10−10; OR = 1.47; 95% CI, 1.38–1.55) and on chromosome 17q12 next to the gene HNF1B (p = 3.35 × 10−16; OR = 1.75; 95% CI, 1.64–1.87). We next carried out an esophageal/tracheal transcriptome profiling in rat embryos at four selected embryonic time points. Based on these data and on already published data, the implicated genes at all three GWAS loci are promising candidates for EA/TEF development. We also analyzed the genetic EA/TEF architecture beyond the single marker level, which revealed an estimated single-nucleotide polymorphism (SNP)-based heritability of around 37% ± 14% standard deviation. In addition, we examined the polygenicity of EA/TEF and found that EA/TEF is less polygenic than other complex genetic diseases. In conclusion, the results of our study contribute to a better understanding on the underlying genetic architecture of ET/TEF with the identification of three risk loci and candidate genes. © 2022 The Authors
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| 2. |
- Sawicki, M., et al.
(author)
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Homogeneous and heterogeneous magnetism in (Zn,Co)O : From a random antiferromagnet to a dipolar superferromagnet by changing the growth temperature
- 2013
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In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 88:8
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Journal article (peer-reviewed)abstract
- A series of (Zn,Co)O layers with Co contents x up to 40% grown by atomic layer deposition have been investigated. All structures deposited at 160 degrees C show magnetic properties specific to II-VI dilute magnetic semiconductors with localized spins S = 3/2 coupled by strong but short-range antiferromagnetic interactions resulting in low-temperature spin-glass freezing for x = 0.16 and 0.4. At higher growth temperature (200 degrees C) metallic Co nanocrystals precipitate in two locations giving rise to two different magnetic responses: (i) a superparamagnetic contribution coming from volume disperse nanocrystals; (ii) a ferromagneticlike behavior brought about by nanocrystals residing at the (Zn,Co)O/substrate interface. It is shown that the dipolar coupling within the interfacial two-dimensional dense dispersion of nanocrystals is responsible for the ferromagneticlike behavior.
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| 3. |
- Gutowski, M. W., et al.
(author)
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Interval Identification of FMR Parameters for Spin Reorientation Transition in (Ga,Mn)As
- 2012
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In: Acta Physica Polonica. Series A: General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics. - 0587-4246. ; 121:5-6, s. 1228-1230
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Journal article (peer-reviewed)abstract
- In this work we report results of ferromagnetic resonance studies of a 6% 15 nm (Ga,Mn)As layer, deposited on (001)-oriented GaAs. The measurements were performed with in-plane oriented magnetic field, in the temperature range between 5 K and 120 K. We observe a temperature induced reorientation of the effective in-plane easy axis from [(1) over bar 10] to [110] direction close to the Curie temperature. The behavior of magnetization is described by anisotropy fields, H-eff (= 4 pi M - H-2 perpendicular to), H-2 parallel to, and H-4 parallel to. In order to precisely investigate this reorientation, numerical values of anisotropy fields have been determined using powerful - but still largely unknown - interval calculations. In simulation mode this approach makes possible to find all the resonance fields for arbitrarily oriented sample, which is generally intractable analytically. In "fitting" mode we effectively utilize full experimental information, not only those measurements performed in special, distinguished directions, to reliably estimate the values of important physical parameters as well as their uncertainties and correlations.
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| 4. |
- Proselkov, O., et al.
(author)
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Thickness dependent magnetic properties of (Ga,Mn) As ultrathin films
- 2012
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In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 100:26
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Journal article (peer-reviewed)abstract
- We report on a monotonic reduction of Curie temperature in dilute ferromagnetic semiconductor (Ga,Mn) As upon a well controlled chemical-etching/oxidizing thinning from 15 nm down to complete removal of the ferromagnetic response. The effect already starts at the very beginning of the thinning process and is accompanied by the spin reorientation transition of the in-plane uniaxial anisotropy. We postulate that a negative gradient along the growth direction of self-compensating defects (Mn interstitial) and the presence of surface donor traps gives quantitative account on these effects within the p-d mean field Zener model with adequate modifications to take a nonuniform distribution of holes and Mn cations into account. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4731202]
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