| 1. |
- Raiteri, C. M., et al.
(författare)
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WEBT and XMM-Newton observations of 3C 454.3 during the post-outburst phase - Detection of the little and big blue bumps
- 2007
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Ingår i: Astronomy and Astrophysics. - : EDP Sciences. - 0004-6361 .- 1432-0746. ; 473:3, s. 819-827
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Tidskriftsartikel (refereegranskat)abstract
- Context. The quasar-type blazar 3C 454.3 was observed to undergo an unprecedented optical outburst in spring 2005, affecting the source brightness from the near-IR to the X-ray frequencies. This was first followed by a millimetric and then by a radio outburst, which peaked in February 2006. Aims. In this paper we report on follow-up observations to study the multiwavelength emission in the post-outburst phase. Methods. Radio, near-infrared, and optical monitoring was performed by the Whole Earth Blazar Telescope (WEBT) collaboration in the 2006-2007 observing season. XMM-Newton observations on July 2-3 and December 18-19, 2006 added information on the X-ray and UV states of the source. Results. The source was in a faint state. The radio flux at the higher frequencies showed a fast decreasing trend, which represents the tail of the big radio outburst. It was followed by a quiescent state, common at all radio frequencies. In contrast, moderate activity characterized the near-IR and optical light curves, with a progressive increase of the variability amplitude with increasing wavelength. We ascribe this redder-when-brighter behaviour to the presence of a ""little blue bump"" due to line emission from the broad line region, which is clearly visible in the source spectral energy distribution (SED) during faint states. Moreover, the data from the XMM- Newton Optical Monitor reveal a rise of the SED in the ultraviolet, suggesting the existence of a "" big blue bump"" due to thermal emission from the accretion disc. The X-ray spectra are well fitted with a power- law model with photoelectric absorption, possibly larger than the Galactic one. However, the comparison with previous X-ray observations would imply that the amount of absorbing matter is variable. Alternatively, the intrinsic X-ray spectrum presents a curvature, which may depend on the X-ray brightness. In this case, two scenarios are possible. i) There is no extra absorption, and the X-ray spectrum hardens at low energies, the hardening being more evident in bright states; ii) there is a constant amount of extra absorption, likely in the quasar environment, and the X-ray spectrum softens at low energies, at least in faint X-ray states. This softening might be the result of a flux contribution by the high-frequency tail of the big blue bump.
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| 2. |
- Donchev, V., et al.
(författare)
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Optical properties of thick GaInAs(Sb)N layers grown by liquid-phase epitaxy
- 2017
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Ingår i: 19TH INTERNATIONAL SCHOOL ON CONDENSED MATTER PHYSICS (ISCMP): ADVANCES IN NANOSTRUCTURED CONDENSED MATTER: RESEARCH AND INNOVATIONS. - : IOP PUBLISHING LTD.
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Konferensbidrag (refereegranskat)abstract
- We present an experimental and theoretical study of GaInAs(Sb)N layers with thickness around 2 mu m, grown by liquid-phase epitaxy (LPE) on n-type GaAs substrates. The samples are studied by surface photovoltage (SPV) spectroscopy and by photoluminescence spectroscopy. A theoretical model for the band structure of Sb-containing dilute nitrides is developed within the semi-empirical tight-binding approach in the sp(3)d(5)s*s(N) parameterisation and is used to calculate the electronic structure for different alloy compositions. The SPV spectra measured at room temperature clearly show a red shift of the absorption edge with respect to the absorption of the GaAs substrate. The shifts are in agreement with theoretical calculations results obtained for In, Sb and N concentrations corresponding to the experimentally determined ones. Photoluminescence measurements performed at 300K and 2 K show a smaller red shift of the emission energy with respect to GaAs as compared to the SPV results. The differences are explained by a tail of slow defect states below the conduction band edge, which are probed by SPV, but are less active in the PL experiment.
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| 3. |
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| 4. |
- Milanova, M., et al.
(författare)
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Experimental study of the effect of local atomic ordering on the energy band gap of melt grown InGaAsN alloys
- 2017
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Ingår i: Semiconductor Science and Technology. - : IOP PUBLISHING LTD. - 0268-1242 .- 1361-6641. ; 32:8
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Tidskriftsartikel (refereegranskat)abstract
- We present a study of melt grown dilute nitride InGaAsN layers by x-ray photoelectron spectroscopy (XPS), Raman and photoluminescence (PL) spectroscopy. The purpose of the study is to determine the degree of atomic ordering in the quaternary alloy during the epitaxial growth at near thermodynamic equilibrium conditions and its influence on band gap formation. Despite the low In concentration (similar to 3%) the XPS data show a strong preference toward In-N bonding configuration in the InGaAsN samples. Raman spectra reveal that most of the N atoms are bonded to In instead of Ga atoms and the formation of N-centred In3Ga1 clusters. PL measurements reveal smaller optical band gap bowing as compared to the theoretical predictions for random alloy and localised tail states near the conduction band minimum.
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| 5. |
- Milanova, M., et al.
(författare)
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Investigation of LPE grown dilute nitride InGaAs(Sb)N layers for photovoltaic applications
- 2019
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Ingår i: 10TH JUBILEE CONFERENCE OF THE BALKAN PHYSICAL UNION. - : AMER INST PHYSICS. - 9780735418035
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Konferensbidrag (refereegranskat)abstract
- We report on LPE growth and characterization of dilute nitride InGaAs(Sb)N layers nearly lattice matched to GaAs. In order to obtain high quality epitaxial layers without phase separation low-temperature variant of LPE method has been used. The composition and crystalline quality of the grown InGaAs(Sb)N layers have been determined by energy dispersive X-ray microanalysis and X-ray diffraction methods. SEM and AFM measurements on grown samples revealed flat interfaces and surface roughness in the range 0.2 - 0.3 nm. In order to identify the N-bonding mechanism in the alloys and the nature of nitrogen related clusters IR absorption and Raman scattering spectroscopy have been applied. The optical band gap of the samples is studied by photoluminescence (PL) spectroscopy at low and room temperatures and by surface photovoltage (SPV) spectroscopy at room temperature. The SPV and PL spectra reveal a red shift of the absorption edge and PL peak position as compared to GaAs, as well as localized states near the conduction band minimum. However, the optical band gap bowing of the samples appears smaller with respect to the random alloy, which is explained by the short-range ordering favored by LPE growth at near-equilibrium conditions. Variable angle ellipsometry is applied to determine the spectral behavior of the complex refractive index and estimate the band gap energy of the samples.
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| 6. |
- Ratnikov, V, et al.
(författare)
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Bragg and Laue x-ray diffraction study of dislocations in thick hydride vapor phase epitaxy GaN films
- 2000
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Ingår i: Journal of Applied Physics. - 0021-8979 .- 1089-7550. ; 88:11, s. 6252-6259
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Tidskriftsartikel (refereegranskat)abstract
- The dislocation structure of hydride vapor phase epitaxial thick GaN layers grown on sapphire is studied by analysis of the microdistortion tensor components. Symmetrical reflections (including reflections from planes forming a large angle with the basal plane) with two modes of scanning (theta and theta -2 theta) in two geometries (Bragg and Laue) are used to obtain the tensor components. The instant connections between the tensor components and major dislocation types are specified. Different types of dislocation distributions have been identified in the thick GaN films grown on sapphire with and without undoped and Si-doped metalorganic chemical vapor deposited templates. Transmission electron microscopy was used to confirm the x-ray results by direct visualization of defect rearrangements. (C) 2000 American Institute of Physics. [S0021-8979(00)06023-0].
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| 7. |
- Valcheva, E., et al.
(författare)
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Elimination of nonuniformities in thick GaN films using metalorganic chemical vapor deposited GaN templates
- 2001
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Ingår i: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 90:12, s. 6011-6016
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Tidskriftsartikel (refereegranskat)abstract
- Thick hydride vapor phase epitaxial GaN layers are grown on metalorganic chemical vapor deposited GaN template layers as well as directly on sapphire, with the aim of investigating the effect of the template on the strain relaxation and spatial distribution of free carriers in the overgrown GaN films. Spatially resolved cross-sectional micro-Raman spectroscopy, cathodoluminescence, and transmission electron microscopy show improved crystalline quality for growth on metalorganic chemical vapor deposited GaN templates. The highly doped and highly defective near-substrate layer composed of columnar domains, typically present in hydride vapor phase epitaxial GaN films grown directly on sapphire, is absent in the layers grown on templates. Consequently, this results in elimination of the nonuniformities of free electron distribution, a lower residual free carrier concentration (<1017 cm-3), and improved strain relaxation. © 2001 American Institute of Physics.
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| 8. |
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| 9. |
- Valcheva, E., et al.
(författare)
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Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
- 2001
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Ingår i: Materials Science & Engineering. - 0921-5107 .- 1873-4944. ; 82:1-3, s. 35-38
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Tidskriftsartikel (refereegranskat)abstract
- Thick HVPE-GaN layers are grown on Si-doped and undoped MOCVD-GaN 'template' layers as well as directly on sapphire, with the aim to investigate the effect of the MOCVD template on the strain relaxation and spatial distribution of free carriers in the overgrown HVPE films. Spatially resolved cross-sectional micro-Raman measurements, cathodoluminescence and transmission electron microscopy show improved crystalline quality resulting in elimination of the non-uniformities of electron distribution, a low free carrier concentration (< 1017 cm-3) as well as a significant strain relaxation effect. © 2001 Elsevier Science B.V.
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