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1.
  • Yen, Cheng Tyng, et al. (author)
  • Comparative study of 4H-SiC DMOSFETs with N2O thermal oxide and deposited oxide with post oxidation anneal
  • 2014
  • In: Materials Science Forum. - 9783038350101 ; , s. 989-992
  • Conference paper (peer-reviewed)abstract
    • Two kinds of gate oxides, direct thermal oxidation in a nitrous oxide ambient at 1250°C (TGO) and a PECVD oxide followed by a post deposition oxidation in nitrous oxide ambient at 1150°C (DGO) were studied. DGO showed a lower interface trap density and was able to provide a higher current as being implemented in MOSFETs through the improved channel mobility. However the 6.45 MV/cm average breakdown field of DGO is lower than the 10.1 MV/cm breakdown field of TGO. The lower breakdown field, more leaky behavior and the existence of multiple breakdown mechanisms suggest that DGO needs further improvements before it can be used in real applications.
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2.
  • Yen, Cheng Tyng, et al. (author)
  • SiC epi-channel lateral MOSFETs
  • 2014
  • In: Materials Science Forum. - 9783038350101 ; , s. 927-930
  • Conference paper (peer-reviewed)abstract
    • SiC lateral MOSFETs with multi-layered epi-channels were studied in this work. The epi-channel consisting of a high concentration n-type epilayer sandwiched between two lightly doped p-type layers showed a maximum field effect mobility of 17 cm2/V.s, as compared to 1.53 cm2/V.s for inversion type devices without epi-channels. These devices are normally-off with an average threshold voltage of 1.34V.
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