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- Kyrychenko, F.V., et al.
(author)
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Investigation of a GaMnN/GaN/InGaN structure for spinLED
- 2005
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In: 27th Int. Conf. on the Physics of Semicond,2004. - : American Institute of Physics (AIP). - 0735402574 ; , s. 1319-1320
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Conference paper (other academic/artistic)abstract
- Theoreticaland experimental studies of GaMnN/GaN/InGaN structure for a spin LEDdevice were performed. Strong electron spin relaxation was experimentally observedin a InGaN/GaN quantum well. It is shown that thestrong spin relaxation might result from the built-in piezoelectric fieldin strained wurzite heterostructures. A five level k · pmodel was used for microscopic calculations of the structure inversionasymmetry induced spin-orbit interaction. The magnitude of this interaction isshown to be comparable with that in InGaAs/GaAs quantum structures.©2005 American Institute of Physics
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