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- Johansson, Å. A., et al.
(författare)
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Intrinsic, n- and p-doped a-Si:H thin films grown by DC magnetron sputtering with doped targets
- 1999
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Ingår i: Materials Research Society Symposium Proceedings. - 0272-9172 .- 1946-4274. ; 557, s. 31-36
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Tidskriftsartikel (refereegranskat)abstract
- Intrinsic, n- and p-type a-Si:H films were deposited by dc magnetron sputtering and analyzed with several techniques. The films were synthesized in a reactive Ar-Ha atmosphere giving H contents in the range of 3-20 at %. The films were sputtered from pure silicon targets and doped silicon targets with 1 at % B or P. Doping by co-sputtering from composite Si/B4C targets was also explored. The doping concentrations were 3 × 1020 - 2 × 1021 cm-3 for the p-type films and 2.6-2.9 × 1019cm-3 for the n-type films. The conductivity was in the range lO'MO"4 cm-1 for p-doped films and 10-5 Cl cm-1 for the best n-doped films. Band gap estimations were obtained from dielectric function data and showed an increase with hydrogen content. A comparison to device quality PECVD-samples was also made.
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