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- Amirfeiz, Petra, 1973, et al.
(author)
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Hydrophobic low temperature wafer bonding; void formation in the oxide free interface
- 2003
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In: Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding. ; 19, s. 267-
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Conference paper (peer-reviewed)abstract
- The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing.
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- Bengtsson, Stefan, 1961, et al.
(author)
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Wafer bonding: A flexible way to manufacture SOI materials for high performance applications
- 2004
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In: Proc. 19th Symp. on Microelectronics Technology and Devices. ; 3, s. 241-
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Conference paper (peer-reviewed)abstract
- An overview is given on the use of wafer bonding for formation of Silicon-On-Insulator (SOI) materials for high performance applications. Recent developments in wafer bonding and available techniques for formation of thin semiconductor films is presented. Furthermore, a review is given on results in use of wafer bonding for formation of advanced SOI-materials. Finally, a more detailed discussion is given on the use of wafer bonding for manufacture of SOI-materials intended for high-frequency applications and SOI-materials with films of electrically insulating but highly thermally conductive materials as buried insulators.
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- Berg, Jonas, 1973, et al.
(author)
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A study on integration of molecular devices into CMOS compatible technology
- 2004
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In: Physica Scripta. - 1402-4896 .- 0031-8949. ; T114, s. 175-180
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Journal article (peer-reviewed)abstract
- One main obstacle for measuring matter at the level of single molecule is the technology to make a bridge between molecules and microscopic structures (electrodes). A method of fabricating vertical silicon based nanogaps for contacting nanoscale elements has been developed and exploited to confront this problem. The developed technique is compatible to existing CMOS fabrication technology, reproducible and the gap size is easy to measure by simple capacitance measurements. Chemical treatment to attach any kind of nanoscale elements into the nanogap is an important issue. In this paper, we address problems related to surface leakage induced from different chemical processes. We have studied the effects of solvents on the surface leakage as well as surface leakage induced by nano components themselves. Surface leakage is a diffusion current process, and a set of parameters describing it has been used to compare the influence from different chemical processes. The study on solvents confirmed no predominant surface leakage induced by the presence of solvents like toluene and chloroform.
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