1. |
|
|
2. |
- Pougeoise, E., et al.
(author)
-
Experimental characteristics and analysis of transverse modes in 1.3 μm strained InGaAs quantum well VCSELs
- 2006
-
In: Proc SPIE Int Soc Opt Eng. - : SPIE. - 0819462411 - 9780819462411
-
Conference paper (peer-reviewed)abstract
- In the context of optical interconnection applications, we report on results obtained on strained InGaAs quantum well Vertical Cavity Surface Emitting Lasers (VCSELs). Our devices are top p-type DBR oxide-confined VCSEL, grown by metalorganic vapour-phase epitaxy (MOVPE). These lasers exhibit low threshold currents and deliver up to 1.77 mW in continuous wave operation at room temperature. Fundamental mode continuous-wave lasing at wavelengths beyond 1300 nm at room temperature is reached for a 4 μm oxide diameter VCSEL. The particular design of the active layer based on a large detuning between the gain maximum and the cavity resonance gives our devices a very specific thermal and modal behaviour. Therefore, we study the spectral and spatial distributions of the transverse modes by near field scanning optical microscopy using a micropolymer tip at the end of an optical fibre.
|
|
3. |
- Pougeoise, E., et al.
(author)
-
Experimental study of the lasing modes of 1.3-ÎŒm highly strained InGaAs-GaAs quantum-well oxide-confined VCSELs
- 2009
-
In: IEEE Photonics Technology Letters. - 1041-1135 .- 1941-0174. ; 21:6, s. 377-379
-
Journal article (peer-reviewed)abstract
- We present an experimental study of the main modes involved in the emission properties of InGaAs-GaAs quantum-well oxide-confined long wavelength vertical-cavity surface-emitting lasers. Lasing properties are dominated by the so-called "oxide modes" and by aperture modes, respectively, for small and large driving currents. We present complementary investigations of the laser emission including far-field angular distribution and spectroscopic near-field optical microscopy to a better understanding of the nature of the "oxide modes."
|
|
4. |
|
|
5. |
|
|