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- Rahbi, R., et al.
(author)
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Neutralisation of group vi donors by hydrogen in gallium arsenide
- 1994
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In: Solid State Communications. - : Elsevier BV. - 0038-1098 .- 1879-2766. ; 91:3, s. 187-190
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Journal article (peer-reviewed)abstract
- The infrared absorption of GaAs:S and GaAs:Te samples partially neutralised by hydrogen show two local modes with very similar frequencies. These modes are comparable to the ones already reported in GaAs:Se. These results are interpreted by assuming that neutralisation takes place by the formation of a bond between a Ga atom first neighbour of the chalcogen and a H atom in an antibonding location. This assumption is strengthened by ab initio calculations that provide also frequencies of the right order of magnitude.
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