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  • Thierry-Jebali, N., et al. (author)
  • Applications of vapor-liquid-solid selective epitaxy of highly p-type doped 4H-SiC: PiN diodes with peripheral protection and improvement of specific contact resistance of ohmic contacts
  • 2014
  • In: SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2. - : Trans Tech Publications. - 9783038350101 ; , s. 639-644
  • Conference paper (peer-reviewed)abstract
    • This work deals with two applications of the Selective Epitaxial Growth of highly p-type doped buried 4H-SiC in Vapor-Liquid-Solid configuration (SEG-VLS). The first application is the improvement of the Specific Contact Resistance (SCR) of contacts made on such p-type material. As a result of the extremely high doping level, SCR values as low as 1.3x10-6 Ω.cm2 have been demonstrated. Additionally, the high Al concentration of the SEG-VLS 4H-SiC material induces a lowering of the Al acceptor ionization energy down to 40 meV. The second application is the fabrication of PiN diodes with SEG-VLS emitter and guard-rings peripheral protection. Influence of some process parameters and crystal orientation on the forward and reverse characteristics of the PiN diodes is discussed. © (2014) Trans Tech Publications, Switzerland.
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Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Ferro, G (1)
Henry, Anne (1)
Lazar, M (1)
Brosselard, P. (1)
Thierry-Jebali, N. (1)
Brylinski, C. (1)
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Contreras, S. (1)
Carole, D. (1)
Souliere, V. (1)
Vo-Ha, A. (1)
Planson, D. (1)
Konczewicz, L. (1)
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University
Linköping University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
2014 (1)Undo refine

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