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  • Iovan, Adrian, et al. (author)
  • Spin diode based on Fe/MgO double tunnel junction
  • 2008
  • In: Nano letters (Print). - : American Chemical Society (ACS). - 1530-6984 .- 1530-6992. ; 8:3, s. 805-809
  • Journal article (peer-reviewed)abstract
    • We demonstrate a spin diode consisting of a semiconductor-free nanoscale Fe/MgO-based double tunnel junction. The device exhibits a near perfect spin-valve effect combined with a strong diode effect. The mechanism consistent with our data is resonant tunneling through discrete states in the middle ferromagnetic layer sandwiched by tunnel barriers of different spin-dependent transparency. The observed magnetoresistance is a record high > 1000%, essentially making the structure an on/off spin switch. This, combined with the strong diode effect, similar to 100, demonstrates a new device principle, promising for memory and reprogrammable logic applications.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Andersson, Sebastian (1)
Korenivski, Vladisla ... (1)
Naidyuk, Yu G. (1)
Dieny, B. (1)
Iovan, Adrian (1)
Vedyaev, A. (1)
University
Royal Institute of Technology (1)
Language
English (1)
Year
2008 (1)

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