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1.	Jamshidi, Mahboubeh, et al. (author) Copper(I) Iodide Thin Films: Deposition Methods and Hole-Transporting Performance 2024 In: Molecules. - : Multidisciplinary Digital Publishing Institute (MDPI). - 1431-5157 .- 1420-3049. ; 29:8 Research review (peer-reviewed)abstract The pursuit of p-type semiconductors has garnered considerable attention in academia and industry. Among the potential candidates, copper iodide (CuI) stands out as a highly promising p-type material due to its conductivity, cost-effectiveness, and low environmental impact. CuI can be employed to create thin films with >80% transparency within the visible range (400–750 nm) and utilizing various low-temperature, scalable deposition techniques. This review summarizes the deposition techniques for CuI as a hole-transport material and their performance in perovskite solar cells, thin-film transistors, and light-emitting diodes using diverse processing methods. The preparation methods of making thin films are divided into two categories: wet and neat methods. The advancements in CuI as a hole-transporting material and interface engineering techniques hold promising implications for the continued development of such devices.

Jamshidi, Mahboubeh, et al. (author)
Copper(I) Iodide Thin Films: Deposition Methods and Hole-Transporting Performance
2024
In: Molecules. - : Multidisciplinary Digital Publishing Institute (MDPI). - 1431-5157 .- 1420-3049. ; 29:8
Research review (peer-reviewed)abstract
- The pursuit of p-type semiconductors has garnered considerable attention in academia and industry. Among the potential candidates, copper iodide (CuI) stands out as a highly promising p-type material due to its conductivity, cost-effectiveness, and low environmental impact. CuI can be employed to create thin films with >80% transparency within the visible range (400–750 nm) and utilizing various low-temperature, scalable deposition techniques. This review summarizes the deposition techniques for CuI as a hole-transport material and their performance in perovskite solar cells, thin-film transistors, and light-emitting diodes using diverse processing methods. The preparation methods of making thin films are divided into two categories: wet and neat methods. The advancements in CuI as a hole-transporting material and interface engineering techniques hold promising implications for the continued development of such devices.

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