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  • Alfieri, G, et al. (author)
  • Capacitance spectroscopy study of high energy electron irradiated and annealed 4H-SIC
  • 2005
  • In: SILICON CARBIDE AND RELATED MATERIALS 2004. - ZURICH-UETIKON : TRANS TECH PUBLICATIONS LTD. - 0878499636 ; , s. 365-368
  • Conference paper (peer-reviewed)abstract
    • Deep level transient spectroscopy (DLTS) was employed to investigate the annealing behaviour and thermal stability of radiation induced defects in nitrogen doped 4H-SiC epitaxial layers, grown by chemical vapor deposition (CVD). The epilayers have been irradiated with 15 MeV electrons and an isochronal annealing series has been carried out. The measurements have been performed after each annealing step and six electron traps located in the energy band gap range of 0.42-1.6 eV below the conduction band edge (E-c) have been detected.
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  • Result 1-1 of 1
Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Svensson, BG (1)
Alfieri, G. (1)
Linnarsson, Margaret ... (1)
Monakhov, EV (1)
University
Royal Institute of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2005 (1)

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