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1.	Bergsten, Johan, et al. (author) AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor 2016 In: Japanese Journal of Applied Physics. - : Institute of Physics Publishing (IOPP). - 0021-4922 .- 1347-4065. ; 55, s. 05FK02-1-05FK02-4 Journal article (peer-reviewed)abstract AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using analternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuningthe growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growthconditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation anddispersion. Good isolation with OFF-state currents of 2 ' 10%6A/mm, breakdown fields of 70V/μm, and low drain induced barrier lowering of0.13mV/V are found. Dispersive effects are examined using pulsed current–voltage measurements. Current collapse and knee walkout effectslimit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer aversatile approach to decrease dispersive effects in GaN HEMTs.

Bergsten, Johan, et al. (author)
AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
2016
In: Japanese Journal of Applied Physics. - : Institute of Physics Publishing (IOPP). - 0021-4922 .- 1347-4065. ; 55, s. 05FK02-1-05FK02-4
Journal article (peer-reviewed)abstract
- AlGaN/GaN high electron mobility transistors (HEMTs) fabricated on a heterostructure grown by metalorganic chemical vapor deposition using analternative method of carbon (C) doping the buffer are characterized. C-doping is achieved by using propane as precursor, as compared to tuningthe growth process parameters to control C-incorporation from the gallium precursor. This approach allows for optimization of the GaN growthconditions without compromising material quality to achieve semi-insulating properties. The HEMTs are evaluated in terms of isolation anddispersion. Good isolation with OFF-state currents of 2 ' 10%6A/mm, breakdown fields of 70V/μm, and low drain induced barrier lowering of0.13mV/V are found. Dispersive effects are examined using pulsed current–voltage measurements. Current collapse and knee walkout effectslimit the maximum output power to 1.3W/mm. With further optimization of the C-doping profile and GaN material quality this method should offer aversatile approach to decrease dispersive effects in GaN HEMTs.

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