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  • Kakanakova-Georgieva, Anelia, 1970-, et al. (author)
  • Uniform hot-wall MOCVD epitaxial growth of 2 inch AlGaN/GaN HEMT structures
  • 2007
  • In: Journal of Crystal Growth, Vol. 300. - : Elsevier BV. - 0022-0248. ; , s. 100-103
  • Conference paper (peer-reviewed)abstract
    • The hot-wall metalorganic chemical vapor deposition (MOCVD) concept has been applied to the growth of AlxGa1-xN/GaN high electron mobility transistor (HEMT) device heterostructures on 2 inch 4H-SiC wafers. Due to the small vertical and horizontal temperature gradients inherent to the hot-wall MOCVD concept the variations of all properties of a typical HEMT heterostructure are very small over the wafer: GaN buffer layer thickness of 1.83 μm±1%, Al content of the AlxGa1-xN barrier of 27.7±0.1%, AlxGa1-xN barrier thickness of 25 nm±4%, sheet carrier density of 1.05×1013 cm-2±4%, pinch-off voltage of -5.3 V±3%, and sheet resistance of 449 Ω±1%.
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  • Result 1-1 of 1
Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Janzén, Erik, 1954- (1)
Kakanakova-Georgieva ... (1)
Ivanov, Ivan Gueorgu ... (1)
Forsberg, Urban, 197 ... (1)
University
Linköping University (1)
Language
English (1)
Year
2007 (1)

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