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  • Isoya, J., et al. (author)
  • EPR Identification of Defects and Impurities in SiC : To Be Decisive
  • 2009
  • In: Materials Science Forum, Vols. 600-603. - : Trans Tech Publications. ; , s. 279-284
  • Conference paper (peer-reviewed)abstract
    • In EPR (electron paramagnetic resonance) identification of point defects, hyperfine (HF) interaction is decisive information not only for chemical identity but also for the local geometry and the electronic state. In some intrinsic defects in SiC, the wave function of the unpaired electron extends quite unevenly among major atoms comprising the defects. In such a case, the determination of the number of equivalent atoms and the chemical identity (Si or C) of those atoms even with weak HF splitting are useful to compare with HF parameters obtained theoretically. For vacancy-related defects of relatively deep levels, the sum of the spin densities on the nearest-neighbor shell is found to be 60-68%.
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Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Ohshima, T. (1)
Janzén, Erik, 1954- (1)
Nguyen, Son Tien, 19 ... (1)
Isoya, J. (1)
Umeda, T. (1)
Mizuochi, N. (1)
University
Linköping University (1)
Language
English (1)
Year
2009 (1)

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