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  • Wagner, Matthias, 1969-, et al. (author)
  • Photoluminescence upconversion in 4H-SiC
  • 2002
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 81:14, s. 2547-
  • Journal article (peer-reviewed)abstract
    •  Efficient photoluminescence upconversion is observed in 4H-SiC samples containing both the UD-3 defect and the titanium impurity. In this process, the titanium photoluminescence emission with no-phonon (NP) lines at 2.848 eV (A0) and 2.789 eV (B0) can be excited by tuning the laser to the NP line of UD-3 at 1.356 eV. In samples containing either only UD-3 or only titanium, a different photoluminescence upconversion process can be observed, which occurs at photon energies higher than ~1.5 eV without exhibiting sharp features. At least one of the two processes generates both free electrons and free holes and can, therefore, be a candidate for an important recombination channel.
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