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  • Wongmanerod, S, et al. (author)
  • Many-body effects in highly p-type modulation-doped GaAs/AlxGa1-xAs quantum wells
  • 2000
  • In: Physical Review B. Condensed Matter and Materials Physics. - 1098-0121 .- 1550-235X. ; 61:4, s. 2794-2798
  • Journal article (peer-reviewed)abstract
    • Many-body effects have been optically investigated for modulation-doped quantum wells at high acceptor densities. The observed band-gap shrinkage, up to approximate to 20 meV, is consistent with calculations based on the Hartree and random-phase approximations including the finite well width effect. A recombination near the Fermi edge with light-hole character is strikingly enhanced at high acceptor densities. An interpretation based on carrier-carrier interaction is proposed. Finally, the exciton is found to be quenched for hole densities higher than approximate to 2x10(12) cm(-2).
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journal article (1)
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peer-reviewed (1)
Author/Editor
Sernelius, Bo (1)
Holtz, Per-Olof (1)
Monemar, Bo (1)
Bugajski, M (1)
Mauritz, O. (1)
Wongmanerod, S. (1)
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Reginski, K (1)
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Linköping University (1)
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English (1)
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