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  • Izadifard, Morteza, et al. (author)
  • Band alignment in GaInNP/GaAs heterostructures grown by gas-source molecular-beam epitaxy
  • 2005
  • In: Applied Physics Letters. - : AIP Publishing. - 0003-6951 .- 1077-3118. ; 86:26, s. 261904-
  • Journal article (peer-reviewed)abstract
    • Low-temperature photoluminescence (PL), PL excitation, and optically detected cyclotron resonance measurements are employed to determine band alignment in GaInNP/GaAs heterostructures grown by gas-source molecular-beam epitaxy. The type II band alignment at the Ga0.46In0.54NxP1−x/GaAs interface is concluded for the alloys with x ≥ 0.5% based on (i) highly efficient PL upconversion observed in the N containing samples and (ii) appearance of a near-infrared PL emission attributed to the spatially indirect type II transitions. Compositional dependence of the conduction band offset at the Ga1−yInyNxP1−x/GaAs interface is also estimated.
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  • Result 1-1 of 1
Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Chen, Weimin (1)
Tu, C. W. (1)
Buyanova, Irina A (1)
Izadifard, Morteza (1)
Hong, Y. G. (1)
Vorona, Igor (1)
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Mtchedlidze, T. (1)
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University
Linköping University (1)
Language
English (1)
Year
2005 (1)

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