SwePub
Sök i SwePub databas

  Extended search

Träfflista för sökning "id:"swepub:oai:lup.lub.lu.se:1c0d7997-8500-44c4-b7ed-01837d5c85e7" "

Search: id:"swepub:oai:lup.lub.lu.se:1c0d7997-8500-44c4-b7ed-01837d5c85e7"

  • Result 1-1 of 1
Sort/group result
   
EnumerationReferenceCoverFind
1.
  • Ganjipour, Bahram, et al. (author)
  • Tunnel Field-Effect Transistors Based on InP-GaAs Heterostructure Nanowires.
  • 2012
  • In: ACS Nano. - : American Chemical Society (ACS). - 1936-086X .- 1936-0851. ; 6:4, s. 3109-3113
  • Journal article (peer-reviewed)abstract
    • We present tunneling field-effect transistors fabricated from InP-GaAs heterostructure nanowires with an n-i-p doping profile, where the intrinsic InP region is modulated by a top gate. The devices show an inverse subthreshold slope down to 50 mV/dec averaged over two decades with an on/off current ratio of approximately 10(7) for a gate voltage swing (V(GS)) of 1 V and an on-current of 2.2 μA/μm. Low-temperature measurements suggest a mechanism of trap-assisted tunneling, possibly explained by a narrow band gap segment of InGaAsP.
  •  
Skapa referenser, mejla, bekava och länka
  • Result 1-1 of 1
Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Samuelson, Lars (1)
Wallentin, Jesper (1)
Borgström, Magnus (1)
Thelander, Claes (1)
Ganjipour, Bahram (1)
University
Lund University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2012 (1)

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view