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  • Kilpi, Olli-Pekka, et al. (author)
  • Vertical nanowire III–V MOSFETs with improved high-frequency gain
  • 2020
  • In: Electronics Letters. - : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 56:13, s. 669-671
  • Journal article (peer-reviewed)abstract
    • High-frequency performance of vertical InAs/InGaAs heterostructure nanowire MOSFETs on Si is demonstrated for the first time for a gate-last configuration. The device architecture allows highly asymmetric capacitances, which increases the power gain. A device with Lg = 120 nm demonstrates fT = 120 GHz, fmax = 130 GHz and maximum stable gain (MSG) = 14.4 dB at 20 GHz. These metrics demonstrate the state-of-the-art performance of vertical nanowire MOSFETs.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Wernersson, Lars-Eri ... (1)
Lind, Erik (1)
Kilpi, Olli Pekka (1)
Svensson, Johannes (1)
Hellenbrand, Markus (1)
University
Lund University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2020 (1)

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