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- Wen, C. -Y., et al.
(author)
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Periodically Changing Morphology of the Growth Interface in Si, Ge, and GaP Nanowires
- 2011
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In: Physical Review Letters. - 1079-7114. ; 107:2
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Journal article (peer-reviewed)abstract
- Nanowire growth in the standard < 111 > direction is assumed to occur at a planar catalyst-nanowire interface, but recent reports contradict this picture. Here we show that a nonplanar growth interface is, in fact, a general phenomenon. Both III-V and group IV nanowires show a distinct region at the trijunction with a different orientation whose size oscillates during growth, synchronized with step flow. We develop an explicit model for this structure that agrees well with experiment and shows that the oscillations provide a direct visualization of catalyst supersaturation. We discuss the implications for wire growth and structure.
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