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  • Park, M. S., et al. (author)
  • InAs/GaAs p-i-p quantum dots-in-a-well infrared photodetectors operating beyond 200 K
  • 2014
  • In: Electronics Letters. - Stevenage, United Kingdom : Institution of Engineering and Technology (IET). - 1350-911X .- 0013-5194. ; 50:23, s. 1731-1732
  • Journal article (peer-reviewed)abstract
    • High-temperature operating performance of p-i-p quantum dots-in-awell infrared photodetectors (QDIPs) is successfully demonstrated. The optically active region consists of 10 layers of p-doped selfassembled InAs quantum dots (QDs) asymmetrically positioned in In0.15Ga0.85As quantum wells (QWs). The dark current is suppressed by an incorporated superlattice (SL) structure composed of 10 pairs of AlGaAs/GaAs heterostructure. The very low recorded dark current makes the fabricated p-i-p QDIPs suitable for high-temperature operation. The measured photoresponse reveals broad mid-wave infrared (MWIR) detection up to 200 K.
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peer-reviewed (1)
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Kim, S. H. (1)
Wang, Q. (1)
Pettersson, Håkan (1)
Lee, E. -H (1)
Jain, Vishal (1)
Choi, W. J. (1)
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Park, M. S. (1)
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Year
2014 (1)

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