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  • Heurlin, Magnus, et al. (author)
  • Axial InP Nanowire Tandem Junction Grown on a Silicon Substrate
  • 2011
  • In: Nano Letters. - : American Chemical Society (ACS). - 1530-6992 .- 1530-6984. ; 11:5, s. 2028-2031
  • Journal article (peer-reviewed)abstract
    • Tandem InP nanowire pn-junctions have been grown on a Si substrate using metal-organic vapor phase epitaxy. In situ HCl etching allowed the different subcomponents to be stacked on top of each other in the axial extension of the nanowires without detrimental radial growth. Electro-optical measurements on a single nanowire tandem pn-junction device show an open-circuit voltage of 1.15 V under illumination close to 1 sun, which is an increase of 67% compared to a single pn-junction device.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Deppert, Knut (1)
Magnusson, Martin (1)
Samuelson, Lars (1)
Borgström, Magnus (1)
Heurlin, Magnus (1)
Wickert, Peter (1)
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Fält, Stefan (1)
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University
Lund University (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Engineering and Technology (1)
Year
2011 (1)

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