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- Sveinbjörnsson, Einar, 1964, et al.
(author)
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Electroluminescence from silicon p-n junctions prepared by wafer bonding
- 1998
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In: Proceedings of the Fourth International Symposium on Semiconductor Wafer Bonding: Science, Technology, and Applications. ; , s. 264-
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Conference paper (peer-reviewed)abstract
- We report on electro- and photoluminescence from silicon p-n diodes formed by hydrophobic wafer bonding. Four main spectral features associated with the bonded interface are detected at photon energies between 0.8 and 0.9 eV. Two of these signals are identified as the dislocation-related signals D1 and D2 while two peaks at 0.83 eV and 0.89 eV remain unidentified. However, we observe a signal similar to the 0.83 eV signal in polysilicon and at the junction of a silicon bicrystal
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