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- Raeissi, Bahman, 1979, et al.
(author)
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Multiparameter Admittance Spectroscopy as a Diagnostic Tool for Interface States at Oxide/Semiconductor Interfaces
- 2010
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In: IEEE Transactions on Electron Devices. - 1557-9646 .- 0018-9383. ; 57:7, s. 1702-1705
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Journal article (peer-reviewed)abstract
- Multiparameter admittance spectroscopy (MPAS) measurements have been performed on Al/HfO2/SiOx/Si structures before and after post metallization annealing (PMA). Contour plots of conductance data as a function of the logarithm of inverted signal frequency and applied voltage as obtained by MPAS are compared with standard capacitance versus voltage (C–V) data demonstrating the advantage of MPAS as a diagnostic tool. MPAS reveals more detailed properties of oxide/semiconductor interface states and renders measured data for better perceptiveness.
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