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  • Fu, Ying, 1964, et al. (author)
  • AlGaAs/GaAs and InAlAs/InGaAs Heterostructure Barrier Varactors
  • 1997
  • In: Journal of Applied Physics. - : AIP Publishing. - 0021-8979 .- 1089-7550. ; 82:11, s. 5568-5572
  • Journal article (peer-reviewed)abstract
    • By the Schrödinger and Poisson equations, we have theoretically investigated AlGaAs/GaAs and InAlAs/InGaAs single barrier varactors. The energy band structure, carrier distribution, and conduction current are fully exploited for varactor design. We have explained the experimental current-voltage and capacitance-voltage measurements very well. A simple analytical model for energy band structure is derived based on the Schrödinger and Poisson equation calculation. It is found that a barrier structure of 3 nm Al0.3Ga0.7As/3 nm AlAs/3nm Al0.3Ga0.7As for an Al0.3Ga0.7As/GaAs varactor and a barrier structure of 8 nm In0.52Al0.48As/3 nm AlAs/8 nm In0.52Al0.48As for In0.52Al0.48As/In0.47GaAs are optimal for minimal conduction currents.
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  • Result 1-1 of 1
Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Stake, Jan, 1971 (1)
Willander, Magnus, 1 ... (1)
Dillner, Lars, 1968 (1)
Kollberg, Erik, 1937 (1)
Fu, Ying, 1964- (1)
University
Chalmers University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Engineering and Technology (1)
Year
1997 (1)

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