SwePub
Sök i SwePub databas

  Extended search

Träfflista för sökning "onr:"swepub:oai:DiVA.org:kth-21456" "

Search: onr:"swepub:oai:DiVA.org:kth-21456"

  • Result 1-1 of 1
Sort/group result
   
EnumerationReferenceCoverFind
1.
  • Araujo, C. M., et al. (author)
  • Electrical resistivity, MNM transition and band-gap narrowing of cubic GaN : Si
  • 2002
  • In: Microelectronics Journal. - 0026-2692. ; 33:4, s. 365-369
  • Journal article (peer-reviewed)abstract
    • The electrical resistivity of the Si-donor cubic GaN is investigated theoretically at low temperature. The critical impurity concentration, N-c, for the metal-nonmetal transition is estimated in three different ways: from using the generalized Drude approach (GDA) for the resistivity; from the vanishing of the chemical potential calculated using the dielectric function model with a Lorentz-Lorenz correction; from finding the crossing point between the energy in the insulating and metallic states. The bandgap narrowing (BGN) has been determined theoretically and experimentally above the MNM transition, The experimental data have been obtained with photoluminescence measurements. Theoretical and experimental results are in rough agreement in the range of impurity concentration of interest.
  •  
Skapa referenser, mejla, bekava och länka
  • Result 1-1 of 1

Kungliga biblioteket hanterar dina personuppgifter i enlighet med EU:s dataskyddsförordning (2018), GDPR. Läs mer om hur det funkar här.
Så här hanterar KB dina uppgifter vid användning av denna tjänst.

 
pil uppåt Close

Copy and save the link in order to return to this view