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  • Ekström, Mattias, et al. (author)
  • Low temperature Ni-Al ohmic contacts to p-TYPE 4H-SiC using semi-salicide processing
  • 2018
  • In: International Conference on Silicon Carbide and Related Materials, ICSCRM 2017. - : Trans Tech Publications. - 9783035711455 ; , s. 389-392
  • Conference paper (peer-reviewed)abstract
    • Most semiconductor devices require low-resistance ohmic contact to p-type doped regions. In this work, we present a semi-salicide process that forms low-resistance contacts (~10-4 Ω cm2) to epitaxially grown p-type (>5×1018 cm-3) 4H-SiC at temperatures as low as 600 °C using rapid thermal processing (RTP). The first step is to self-align the nickel silicide (Ni2Si) at 600 °C. The second step is to deposit aluminium on top of the silicide, pattern it and then perform a second annealing step in the range 500 °C to 700 °C.
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Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Östling, Mikael (1)
Elahipanah, Hossein (1)
Ekström, Mattias (1)
Zetterling, Carl-Mik ... (1)
Hou, Shuoben (1)
Salemi, Arash (1)
University
Royal Institute of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2018 (1)

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