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- Gulbinas, Karolis, et al.
(author)
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Raman Scattering and Carrier Diffusion Study in Heavily Co-doped 6H-SiC Layers
- 2014
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In: IOP Conference Series. - : Institute of Physics Publishing (IOPP). - 1757-8981 .- 1757-899X. ; 56:1, s. 012005-
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Journal article (peer-reviewed)abstract
- Thick 6H-SiC epilayers were grown using the fast sublimation method on low-off-axis substrates. They were co-doped with N and B impurities of ≈1019 cm−3 and (41016–51018) cm−3 concentration, respectively. The epilayers exhibited donor-acceptor pair (DAP) photoluminescence. The micro-Raman spectroscopic study exposed a compensated n-6H-SiC epilayer of common quality with some 3C-SiC inclusions. The compensation ratio of B through 200 μm thick epilayer varied in 20-30% range. The free carrier diffusivity was studied by transient grating technique at high injection level. The determined ambipolar diffusion coefficient at RT was found to decrease from 1.15 cm2/s to virtually 0 cm2/s with boron concentration increasing by two orders.
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