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  • Hsu, Chih-Wei, et al. (author)
  • Optical properties of functionalized GaN nanowires
  • 2011
  • In: JOURNAL OF APPLIED PHYSICS. - : American Institute of Physics. - 0021-8979 .- 1089-7550. ; 109:5, s. 053523-
  • Journal article (peer-reviewed)abstract
    • The evolution of the optical properties of GaN nanowires (NWs) with respect to a sequence of surface functionalization processes is reported; from pristine hydroxylated to finally, 3-mercaptopropyltrimethoxysilane (MPTMS) functionalized GaN NWs. Photoluminescence, Raman, stationary, and time-resolved photoluminescence measurements were applied to investigate the GaN NWs with different surface conditions. A documented surface passivation effect of the GaN NWs induced by the MPTMS functionalization is determined based on our characterization results. A hypothesis associated with the surface band bending and the defect levels near the band edges is proposed to explain the observed experimental results.
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