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  • Safonov, A N, et al. (author)
  • Interstitial-carbon hydrogen interaction in silicon
  • 1996
  • In: Physical Review Letters. - 0031-9007 .- 1079-7114. ; 77:23, s. 4812-4815
  • Journal article (peer-reviewed)abstract
    • The T-line luminescence system is created in Si by annealing at 400-600 °C. Shifts and splitting of the spectral features with 13C and D isotope substitution identify the presence of two C atoms and one H atom in the center. Uniaxial stress and magnetic field measurements show that the T center has monoclinic I symmetry and possesses an acceptor ( -/0) level at 0.2 eV below the conduction band. Ab initio cluster calculations lead to a structure in which an interstitial C-H defect binds with a substitutional C atom. The calculated vibrational modes are in good agreement with those observed.
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Type of publication
journal article (1)
Type of content
peer-reviewed (1)
Author/Editor
Jones, R. (1)
Öberg, Sven (1)
Leary, P. (1)
Safonov, A. N. (1)
Lightowlers, E C (1)
Davies, Gordon (1)
University
Luleå University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Natural sciences (1)
Year
1996 (1)

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