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  • Amirfeiz, Petra, 1973, et al. (author)
  • Hydrophobic low temperature wafer bonding; void formation in the oxide free interface
  • 2003
  • In: Proc. of the 7th Int. Symp. on Semiconductor Wafer Bonding. ; 19, s. 267-
  • Conference paper (peer-reviewed)abstract
    • The objective is to investigate plasma assisted bonding processes having the potential of forming oxide-free bonded interfaces. Spontaneous low temperature hydrophobic bonding was achieved using a plasma-assisted technique. High surface energy was obtained when bonding two silicon wafers after argon plasma treatment and a subsequent dip in concentrated HF. In contrast hydrogen plasma caused bonding problems while a mix of hydrogen and nitrogen improved the bondability. A particular interest is directed toward the generation of voids as a consequence of storage at room temperature or low temperature annealing. All samples suffer from void generation both after storage at room temperature and after low temperature annealing.
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  • Result 1-1 of 1
Type of publication
conference paper (1)
Type of content
peer-reviewed (1)
Author/Editor
Bengtsson, Stefan, 1 ... (1)
Amirfeiz, Petra, 197 ... (1)
Sanz-Velasco, Anke, ... (1)
University
Chalmers University of Technology (1)
Language
English (1)
Research subject (UKÄ/SCB)
Engineering and Technology (1)
Year
2003 (1)

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