| 11. |
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| 12. |
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| 13. |
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| 14. |
- Song, J., et al.
(author)
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A MoM-based design and simulation method for an etched diffraction grating demultiplexer
- 2004
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In: Optics Communications. - : Elsevier BV. - 0030-4018 .- 1873-0310. ; 233:04-6, s. 363-371
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Journal article (peer-reviewed)abstract
- A design and simulation method based on the method of moment (MoM) is proposed for an etched diffraction grating (EDG) demultiplexer. The method of moment is used to calculate the surface current, which produces the diffracted field at the image plane, for both polarizations. The present method can be used to design and simulate effectively and accurately an EDG demultiplexer with required specifications (such as the chromatic dispersion and loss variation) for both polarizations and the polarization-dependent loss.
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| 15. |
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| 16. |
- Song, J., et al.
(author)
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Effects of rounded corners on the performance of an echelle diffraction grating demultiplexer
- 2004
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In: Journal of Optics. A, Pure and applied optics. - : IOP Publishing. - 1464-4258 .- 1741-3567. ; 6:8, s. 769-773
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Journal article (peer-reviewed)abstract
- Theeffectsof two different types ofroundedcorneron theperformance(such as the insertion loss, the polarization dependent loss (PDL) and the chromatic dispersion) of anechellediffractiongrating(EDG) demultiplexer are analysed by using an accurate method of moment (MoM). The results show that both the insertion loss and the chromatic dispersion increase rapidly as the radius ofroundedcornersincreases. It is shown that the impact ofroundedtroughs on the PDL is more significant than that ofroundedcrests. The PDL of an EDG demultiplexer can be reduced near the central wavelength at some special values for the radius of theroundedcorners.
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| 17. |
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| 18. |
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| 19. |
- Wang, L. W., et al.
(author)
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Investigation of damage behaviour and isolation effect of n-type 6H-SiC by implantation of oxygen
- 2000
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In: Journal of Physics D. - : IOP Publishing. - 0022-3727 .- 1361-6463. ; 33:12, s. 1551-1555
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Journal article (peer-reviewed)abstract
- Silicon carbide is an important wide-band-gap semiconductor for high temperature, high-voltage, high-power and high-frequency devices. Electrical isolation is an important aspect for device applications. In this report, oxygen ions, 70 keV with doses ranging from 5 x 10(13) to 5 x 10(15) cm(-2), have been implanted into n-type 6H-SiC to investigate the possibility of forming a high-resistive layer. The damage behaviour and internal stress were checked by Rutherford backscattering spectroscopy and channelling, and an x-ray rocking curve, respectively. Atomic force microscope observations revealed that the surface morphology is quite sensitive to the implantation even at a dose of 1 x 10(14) cm(-2) After annealing in nitrogen at 1200 degrees C, no remarkable damage recovery could be seen if the deposit damage energy is over the critical value. Schottky structures of Au/SiC have been fabricated on the annealed samples and I-V curves of metal/SiC/InGeNi were measured at room temperature at both forward and reverse bias; the electrical isolation effect was observed at proper implantation dosages. The results indicated that there exists a dose window for electrical isolation.
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| 20. |
- Wang, L. W., et al.
(author)
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Structural and electrical characteristics of oxygen-implanted 6H-SiC
- 2000
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In: Nuclear Instruments and Methods in Physics Research Section B. - 0168-583X .- 1872-9584. ; 169, s. 1-5
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Journal article (peer-reviewed)abstract
- Silicon carbide is an important wide band gap semiconductor for high-temperature, high-voltage, high-power and high-frequency devices. Ion implantation is an important aspect for both fundamental research and device applications. In this report, oxygen ions, 70 keV with dose ranging from 5 x 10(13) to 5 x 10(15) cm(-2), have been implanted into n-type BH-SIC. The damage behavior and internal stress were checked by Rutherford backscattering spectroscopy and channeling and X-rays rocking curve, respectively. Atomic force microscope observations revealed that the surface morphology is quite sensitive to the implantation even at a dose of 1 x 10(14)/cm(-2). After annealing in nitrogen at 1200 degrees C, no remarkable damage recovery could be seen if the deposit damage energy is above the critical value. Schottky structures of Au/SiC have been fabricated and I-V curves of metal/SiC/InGeNi were measured at room temperature at both forward and reverse bias, electrical isolation effect was observed at proper implantation dose. The results indicated that there exists a dose window for electrical isolations. X-ray photoelectron spectroscopy (XPS) confirmed the formation of silicon oxide and CO due to oxygen implantation. In case of high-dose ion implantation, graphite phase was detected.
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