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- Guina, M., et al.
(author)
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MBE of dilute-nitride optoelectronic devices
- 2013
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In: Molecular Beam Epitaxy. - 9780123878397 ; , s. 171-187
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Book chapter (other academic/artistic)abstract
- Molecular beam epitaxy of dilute-nitride materials has progressed a long way towards claiming its unique place as a key technology, which enables the development of new types of optoelectronics devices. This chapter begins by reviewing the technological particularities related to incorporation of nitrogen into III–V materials when using plasma-assisted molecular beam epitaxy. We then focus on describing the interplay between the growth parameters and nitrogen incorporation processes in dilute-nitride arsenides (III-N–As). Emphasis is laid on nitrogen-related growth kinetics that is accompanied by various bonding configurations and formation of several types of defects. An overview is provided also for dilute-nitride antimonides (III-N–Sb) and dilute-nitride phosphides (III-N–P). Finally, we review the growth optimisation and properties of several classes of dilute-nitride heterostructures for optoelectronics. These include uncooled long-wavelength laser diodes, SESAMs, VECSELs, enabling yellow emission by frequency doubling, and high-efficiency multijunction solar cells for concentrated photovoltaic systems.
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- Metaferia, Wondwosen, et al.
(author)
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Selective area heteroepitaxy of InP nanopyramidal frusta on Si for nanophotonics
- 2013
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In: Indium Phosphide and Related Materials (IPRM), 2012 International Conference on. - : IEEE. - 9781467317252 ; , s. 81-84
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Conference paper (peer-reviewed)abstract
- InP nanopyramidal frusta on InP and InP precoated Si substrates were grown selectively from nano-imprinted circular openings in silicon dioxide mask using a low pressure hydride vapor phase epitaxy reactor. The grown InP nanopyramidal frusta, octagonal in shape, were characterized by Atomic Force Microscopy, Scanning Electron Microscopy and Photoluminescence. The growth is extremely selective and uniform over the entire patterned area on both substrates. The measured diagonal of the top surface is 30 nm and 90 nm for the nanopyramidal frusta grown from 120 nm and 300 nm diameter openings, respectively. The size and morphology as well as the optical quality of these pyramidal frusta make them suitable templates for quantum dot structures for nano photonics and silicon photonics.
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