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Träfflista för sökning "(WFRF:(Moon J)) srt2:(2000-2004)"

Search: (WFRF:(Moon J)) > (2000-2004)

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  • Cho, C. R., et al. (author)
  • Na0.5K0.5NbO3 thin films for MFIS_FET type non-volatile memory applications
  • 2002
  • In: Integrated Ferroelectrics. - 1058-4587 .- 1607-8489. ; 49, s. 21-30
  • Journal article (peer-reviewed)abstract
    • Na0.5K0.5NbO3(NKN) thin films have been prepared on Pt80Ir20, SiO2/Si, and Ta2O5/Si substrates for ferroelectric non-volatile memory applications. Ferroelectric hysteresis loops for Au/NKN/Pt80Ir20 vertical capacitor yielded remnant polarization of 12 muC/cm(2) and coercive field similar to20 kV/cm. Significant flat-band voltage V-FB shifts with buffer layer thickness in Au/NKN/SiO2/Si structures have been attributed to the intermixing between Na and K alkali ions and SiO2 layer. On the other hand, Au/NKN/Ta2O5/Si structure exhibited wide memory window without significant V-FB deviations, low leakage currents, and rather long retention time at zero bias.
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  • Koh, J. H., et al. (author)
  • Dielectric properties and Schottky barriers in silver tantalate-niobate thin film capacitors
  • 2001
  • In: Integrated Ferroelectrics. - 1058-4587 .- 1607-8489. ; 39:1-4, s. 1361-1368
  • Journal article (peer-reviewed)abstract
    • Submicron thick ferroelectric Ag(Ta,Nb)O-3 films have been pulsed laser deposited on the bulk Pt80Ir20 polycrystalline substrates. They are ferroelectric at temperatures below 125 K with the remnant polarization of 0.4 muC/cm(2) @ 77K and paraelectric at higher temperatures with tandelta @ 100 kHz as low as 0.015. Extensive I-V characterization has been performed in a wide temperature range 77 K to 350 K for vertical Me/Ag(Ta,Nb)O-3/Pt80Ir20 capacitive cells, where the metals Me = Pd, Au, Cr, and Al have been used as a top electrode. The electronic transport in thin Me/Ag(Ta,Nb)O-3/Pt80Ir20 capacitors follows the Schottky emission mechanism with the barrier height for the Pd, Au, Cr, and Al of 0.85, 0.8, 0.74, and 0.69 eV, respectively.
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  • Result 1-7 of 7

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